Semiconductor device and method of manufacturing the same

A method for manufacturing a semiconductor device, the method comprising:

• roughening a portion of a first surface of a first conductive plate to form a plurality of roughened regions at the portion of the first surface;
• joining at least one member having a semiconductor element to a mounting region, wherein the mounting region is different from the plurality of roughened regions at the first surface of the first conductive plate;
• sealing the semiconductor element joined to the first conductive plate by a sealing member;
• and
• forming a power terminal that is formed integrally with the first conductive plate and protrudes from the sealing member;
• wherein the plurality of roughened regions are located around the mounting region, and are located away from an outer peripheral edge of the first surface,
• wherein, in the joining, a non-roughened region of the first surface that is located between each of the roughened regions and the outer peripheral edge is supported by a jig,
• wherein two of the plurality of roughened regions surround the mounting region concentrically,
• wherein the two of the plurality of roughened regions are a first roughened region and a second roughened region,
• wherein a sum of respective widths of the two of the plurality of roughened regions is larger than 0.6 millimeters,
• wherein the two of the plurality of roughened regions are separated by a gap,
• wherein the gap between the two of the plurality of roughened regions has a second surface roughness smaller than a first surface roughness of the two of the plurality of roughened regions, and
• wherein the plurality of roughened regions further includes a third roughened region formed to abut a base end of the power terminal, and
• wherein, in a top view of the first surface, the third roughened region is between the base end of the power terminal and the first non-roughened region.

A semiconductor device comprising:

• a semiconductor element including an electrode;
• a sealing member sealing the semiconductor element;
• a conductive plate includes a surface that faces the electrode inside the sealing member;
• and
• a power terminal that is integrally formed with the conductive plate and protrudes from the sealing member, wherein
• the surface of the conductive plate includes:
• a mounting region to which the electrode is joined;
• a first roughened region surrounding the mounting region;
• a non-roughened region located between an outer periphery of the first surface and the first roughened region;
• and
• a second roughened region located between a base end of the power terminal and the non-roughened region and formed to abut the base end of the power terminal, wherein
• a surface roughness of each of the first roughened region and the second roughened region is larger than a surface roughness of the non-roughened region.