Semiconductor structure and fabrication method thereof
AssigneeUnited Microelectronics Corp.
InventorsYao-Hsien Chung, Fu-Yu Tsai, Bin-Siang Tsai
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Abstract
A semiconductor structure includes a semiconductor substrate; an interconnection structure disposed on the semiconductor substrate; a cap layer disposed on the interconnection structure; a top dielectric layer disposed on the cap layer; a bonding dielectric layer disposed on the top dielectric layer; a plurality of copper pads disposed in the bonding dielectric layer, the top dielectric layer and the cap layer; and a plurality of dangling-bond pads disposed in the bonding dielectric layer and the top dielectric layer.
Claims20
A semiconductor structure, comprising:
- a semiconductor substrate;
- an interconnection structure disposed on the semiconductor substrate;
- a cap layer disposed on the interconnection structure;
- a top dielectric layer disposed on the cap layer;
- a bonding dielectric layer disposed on the top dielectric layer;
- a plurality of copper pads disposed in the bonding dielectric layer, the top dielectric layer and the cap layer;
- and
- a plurality of dangling-bond pads disposed in the bonding dielectric layer and the top dielectric layer.
A method of forming a semiconductor structure, comprising:
- providing a semiconductor substrate;
- forming an interconnection structure on the semiconductor substrate;
- forming a cap layer on the interconnection structure;
- forming a top dielectric layer on the cap layer;
- forming a bonding dielectric layer on the top dielectric layer;
- forming a plurality of copper pads in the bonding dielectric layer, the top dielectric layer and the cap layer;
- and
- forming a plurality of dangling-bond pads in the bonding dielectric layer and the top dielectric layer.
Dependencies are inferred from the claim text.