Integrated circuit packages and methods of forming the same

A method comprising:

• forming a power distribution interposer comprising:
• a first bonding layer;
• a first die connector in the first bonding layer;
• and
• a back-side interconnect structure comprising a power rail connected to the first die connector;
• and
• forming an integrated circuit die comprising:
• a second bonding layer;
• a second die connector in the second bonding layer;
• a device layer on the second bonding layer, the device layer comprising a contact and a transistor, the transistor comprising a first source/drain region and a second source/drain region, the contact connecting a back-side of the first source/drain region to the second die connector;
• and
• a front-side interconnect structure on the device layer, the front-side interconnect structure comprising an interconnect that is connected to a front-side of the second source/drain region, a width of the power rail being greater than a width of the interconnect;
• bonding the integrated circuit die to the power distribution interposer, the second bonding layer directly bonded to the first bonding layer by dielectric-to-dielectric bonds, the second die connector directly bonded to the first die connector by metal-to-metal bonds;
• after bonding the integrated circuit die to the power distribution interposer, forming a gap-filling dielectric around the integrated circuit die, a top surface of the gap-filling dielectric being coplanar with a top surface of the integrated circuit die;
• and
• singulating the gap-filling dielectric and the power distribution interposer.

A method comprising:

• forming a die structure by:
• forming a power distribution interposer comprising a back-side interconnect structure, the back-side interconnect structure comprising power rails and data rails;
• attaching a plurality of integrated circuit dies to the power distribution interposer, each of the integrated circuit dies comprising a device layer and a front-side interconnect structure, the device layer disposed between the front-side interconnect structure and the power distribution interposer, the power rails being connected to transistors in the device layer of each of the integrated circuit dies, and the data rails interconnecting the transistors of one of the integrated circuit dies with the transistors of another of the integrated circuit dies;
• forming a gap-filling dielectric between the integrated circuit dies, wherein a top surface of the gap-filling dielectric is coplanar with a top surface of the front-side interconnect structure of the integrated circuit dies;
• and
• singulating the gap-filling dielectric and the power distribution interposer;
• and
• connecting the power distribution interposer of the die structure to a package substrate.