Power semiconductor device, method for manufacturing same, and power conversion device

A power semiconductor device comprising:

• a power module part including a module base on which a first uneven part is formed, the module base being equipped with a power semiconductor element, the power semiconductor element being sealed with a sealant;
• a heat sink base part on which a second uneven part is formed, the heat sink base part being joined to the module base in a manner in which the second uneven part and the first uneven part are fitted together;
• and
• a plurality of heat radiator fins that is attached to the heat sink base part, wherein
• on the module base and the heat sink base part,
• the first uneven part and the second uneven part have a portion at which the first uneven part and the second uneven part are fitted together, the portion extending in a first direction,
• the second uneven part includes a buffer recess that is left as a space with the module base and the heat sink base part joined together, and
• the buffer recess is formed in a flat part of the heat sink base part toward a side opposite to a side to which the module base is joined, and formed to extend in a second direction that crosses the first direction.

A method for manufacturing a power semiconductor device, the method comprising:

• preparing a module base on which a first uneven part is formed;
• forming a power module part by mounting a power semiconductor element on the module base and sealing the power semiconductor element with a sealant in a manner in which the first uneven part is exposed;
• preparing a heat sink base part on which a second uneven part is formed, the second uneven part being fitted into the first uneven part;
• and
• integrating the module base and the heat sink base part by opposing the first uneven part and the second uneven part to each other and pressing one of the module base in the power module part and the heat sink base part to another of the module base in the power module part and the heat sink base part, wherein
• in the preparing the module base and the preparing the heat sink base part, the first uneven part and the second uneven part are formed to have a portion at which the first uneven part and the second uneven part are fitted together, the portion extending in a first direction, and
• in the preparing the module base,
• the first uneven part is formed on a surface of the module base, the surface being the other surface opposite to one surface of the module base on which the power semiconductor element is mounted,
• the first uneven part is formed to include a buffer recess that is left as a space with the module base and the heat sink base part joined together, and
• the buffer recess is formed in a flat part of the other surface toward the one surface, and formed to extend in a second direction that crosses the first direction.

A method for manufacturing a power semiconductor device, the method comprising:

• preparing a module base on which a first uneven part is formed;
• forming a power module part by mounting a power semiconductor element on the module base and sealing the power semiconductor element with a sealant in a manner in which the first uneven part is exposed;
• preparing a heat sink base part on which a second uneven part is formed, the second uneven part being fitted into the first uneven part;
• and
• integrating the module base and the heat sink base part by opposing the first uneven part and the second uneven part to each other and pressing one of the module base in the power module part and the heat sink base part to another of the module base in the power module part and the heat sink base part, wherein
• in the preparing the module base and the preparing the heat sink base part, the first uneven part and the second uneven part are formed to have a portion at which the first uneven part and the second uneven part are fitted together, the portion extending in a first direction, and
• in the preparing the heat sink base part,
• the second uneven part is formed to include a buffer recess that is left as a space with the module base and the heat sink base part joined together, and
• the buffer recess is formed in a flat part of the heat sink base part toward a side opposite to a side to which the module base is joined, and formed to extend in a second direction that crosses the first direction.