Die interconnect structure with embedded inductor(s) including coupled coils formed in redistribution layer (RDL) and adjacent bump-level distribution layer (BDL) for improved Q factor

Abstract

Aspects disclosed herein include a die interconnect structure with embedded inductor(s) including coupled coils formed in redistribution layer (RDL) and adjacent bump-level distribution layer (BDL) for improved Q factor. The die interconnect structure includes a metal pad and a first coil formed in the RDL. The die interconnect structure also includes the BDL which includes a secondary metal pad and a second coil. The die interconnect structure also includes a seed layer between the first coil and the second coil. The die interconnect structure includes an inductor comprising the first coil, the second coil, and a via coupling the first and second coils. In this manner, the additional second coil formed in the BDL has higher conductance, less resistance than a coil formed in metallization layers within the die and, thus, advantageously improving the Q factor of the inductor.

Dependencies are inferred from the claim text.