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US 12,721,153 B2Granted
Topological semi-metal interconnects
AssigneeInternational Business Machines Corporation
InventorsChing-Tzu Chen, Nicholas Anthony Lanzillo, Vijay Narayanan, Takeshi Nogami
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Abstract
Provided is a method for fabricating an interconnect. The method comprises forming a topological semi-metal layer. The method further comprises patterning the topological semi-metal layer to form one or more interconnects. The method further comprises forming a dielectric layer between the one or more interconnects. The method further comprises forming a hermetic dielectric cap layer on top of the one or more interconnects and the dielectric layer.
Claims9
A method comprising:
- forming a topological semi-metal layer;
- patterning the topological semi-metal layer to form one or more interconnects;
- forming a dielectric layer between the one or more interconnects;
- and
- forming a hermetic dielectric cap layer on top of the one or more interconnects and the dielectric layer.
2 more elements
Dependencies are inferred from the claim text.