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US 12,721,143 B2Granted
Hybrid method for forming semiconductor interconnect structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShih-Kang Fu, Ming-Han Lee, Shau-Lin Shue
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Abstract
The present disclosure provides a method that includes depositing a metal layer onto a substrate, subtractive patterning the metal layer into first metal lines, and forming at least one second metal line between two adjacent ones of the first metal lines using a damascene process. The first metal lines have a different metallization structure from the at least one second metal line.
Claims20
A method, comprising:
- depositing a metal layer onto a substrate;
- subtractive patterning the metal layer into first metal lines;
- forming spacers alongside the first metal lines with a trench positioned between the spacers;
- and
- forming at least one second metal line between two adjacent ones of the first metal lines using a damascene process, wherein the at least one second metal line is formed in the trench such that the spacers separate the first metal lines from the at least one second metal line, wherein the first metal lines have a different metallization structure from the at least one second metal line, and wherein a top surface of the first metal lines is above a bottom surface of the at least one second metal line.
2 more elements
A method, comprising:
- providing a substrate;
- forming a metal layer over the substrate, wherein the metal layer comprises a first metal;
- patterning the metal layer to form first metal lines in an etching process;
- forming a dielectric layer interfacing with sidewalls of the first metal lines, wherein a trench with sidewalls comprising the dielectric layer is located between two adjacent ones of the first metal lines, wherein a bottom surface of the trench is level with a bottom surface of the first metal lines;
- and
- forming a second metal line in the trench using a damascene process, wherein the second metal line comprises a second metal different from the first metal, and wherein the bottom surface of the first metal lines is level with or above a bottom surface of the second metal line.
3 more elements
A method, comprising:
- depositing a first dielectric layer over a substrate;
- forming a conductive layer over the first dielectric layer, the conductive layer formed of a noble metal;
- patterning the conductive layer to form a first conductive feature;
- depositing a second dielectric layer over the first dielectric layer and interfacing with sidewalls of the first conductive feature;
- etching the second dielectric layer to form a trench, thereby exposing a top surface of the first dielectric layer in the trench, wherein the first conductive feature has a first width, and the trench has a second width larger than the first width;
- and
- forming a second conductive feature in the trench, the second conductive feature formed of a non-noble metal.
4 more elements
Dependencies are inferred from the claim text.