Semiconductor structures with through via

A semiconductor structure, comprising:

• a substrate;
• a device layer disposed over the substrate, wherein the device layer includes a first device region and a second device region adjacent to the first device region;
• an interconnect structure disposed over the first device region and the second device region;
• a first through-silicon via (TSV) and a second TSV disposed along a first side of the first device region from a top view;
• and
• a third TSV and a fourth TSV disposed along a second side of the second device region from the top view,
• wherein the first TSV and the second TSV are spaced apart from the third TSV and the fourth TSV by the first device region and the second device region,
• wherein the first, the second, the third, and the fourth TSVs each extend through the substrate, the device layer, and the interconnect structure,
• wherein a space between the first device region and the second device region is free of a TSV, and
• wherein each of the first, the second, the third, and the fourth TSVs has an elongated shape from the top view.

A semiconductor structure, comprising:

• a device layer including a first device region and a second device region;
• an interconnect structure disposed over the first device region and the second device region;
• a first through-silicon via (TSV) disposed on a first side of the first device region;
• and
• a second TSV disposed on a second side of the second device region opposite from the first side of the first device region,
• wherein the first TSV and the second TSV each extend through the device layer and the interconnect structure,
• wherein from the top view, each of the first TSV and the second TSV has a racetrack shape including a middle portion and two rounded end portions sandwiching the middle portion, and
• wherein two sides of the middle portion are parallel to the first side of the first device region.