Cryo-compatible quantum computing arrangement and method for producing a cryo-compatible quantum computing arrangement

A method for providing a cryo-compatible quantum computing arrangement, the method comprising:

• providing a microelectronic quantum computing component comprising a substrate structure, a plurality of first contact elements and a plurality of conductive feedthroughs through the substrate structure, wherein the conductive feedthroughs each comprise a layer element comprising a first material that is superconducting at a quantum computing operating temperature below a superconductivity transition temperature and a filling element comprising a second material that is electrically conductive above the superconductivity transition temperature,
• forming an electrical connection between the conductive feedthroughs on a first main surface area of the substrate structure and the associated first contact elements of the microelectronic quantum computing component,
• providing a further microelectronic component comprising a plurality of second contact elements, and
• forming a further electrical connection on a second main surface area of the substrate structure between the conductive feedthroughs with associated second contact elements and the further microelectronic component.

Cryo-compatible quantum computing arrangement, comprising:

• a microelectronic quantum computing component comprising:
• a substrate structure,
• a plurality of first contact elements and
• a plurality of conductive feedthroughs through the substrate structure,
• wherein the conductive feedthroughs on a first main surface area of the substrate structure are electrically connected to associated first contact elements of the microelectronic quantum computing component, and
• a further microelectronic component comprising a plurality of second contact elements,
• wherein, on a second main surface area of the substrate structure, the conductive feedthroughs are electrically connected to associated second contact elements of the further microelectronic component, and
• wherein the conductive feedthroughs each comprise, between the first contact element and the second contact element, a layer element comprising a beta-modification of tungsten that is superconducting at a quantum computer operating temperature below the superconductivity transition temperature and a filling element comprising a tungsten material that is electrically conductive above the superconductivity transition temperature.