US 12,721,124 B2 · Via alignment in single damascene structure

Abstract

An interconnect structure that in one embodiment can include a first metal line level having a first metal line, a second metal line level having a second metal line, and a via line level present between the first and second metal line levels. The via line level includes a via interlevel dielectric surrounding a via stack. The via stack may include an interface metal portion that is in contact with the first metal line, a via intralevel dielectric on the interface metal portion, and a cap metal portion in contact with the second metal line and extending through the via intralevel dielectric into contact with the interface metal portion. In some embodiments, the length of the interface metal portion of the via is greater than a width of the interface metal portion of the via stack.

Claims20

Dependent claims

A semiconductor structure comprising:

a first metal line level having a first metal line;
a second metal line level having a second metal line;
a first metal contact disposed in a via level and extending into contact with the first metal line, the first metal contact having a recessed upper surface;
a first dielectric on the recessed upper surface of the first metal contact;
a second dielectric laterally surrounding the first dielectric and the first metal contact, wherein an upper surface of the first dielectric is coplanar with an upper surface of the second dielectric;
and
a second metal contact in contact with the second metal line and extending through the first dielectric into contact with the first metal contact.

4 more elements

Dependencies are inferred from the claim text.

Via alignment in single damascene structure

Life of this patent

Via alignment in single damascene structure

Life of this patent

Abstract

Claims20