Integration solution for NAND deep contact gap fill

A method of filling a via having a necking point, comprising:

• performing a liner deposition process to form a liner layer on exposed inner surface of a via, wherein the via is formed within a dielectric layer and has a necking point protruding within the via;
• performing a liner pull back process to remove the liner layer above the necking point;
• performing a selective deposition process to partially fill the via with metal fill material from exposed surface of the liner layer below the necking point;
• and
• performing a metal fill process to fill the via with the metal fill material.

A method of filling a via having a necking point, comprising:

• performing a liner deposition process to form a liner layer on exposed inner surface of a via, wherein the via is formed within a dielectric layer and has a necking point protruding within the via;
• performing a liner pull back process to remove the liner layer above the necking point;
• performing a fluorine-free tungsten (FFW) growth process to form a metal capping layer selectively on exposed surfaces of the liner layer;
• performing a selective deposition process to partially fill the via with metal fill material from exposed surface of the metal capping layer below the necking point;
• and
• performing a metal fill process to fill the via with the metal fill material.