Patterning method

A patterning method, comprising:

• providing a first template, wherein the first template comprises:
• at least one first main pattern located in a first region of the first template;
• first dummy patterns located in the first region of the first template and located aside the at least one first main pattern;
• and
• second main patterns located in a second region of the first template, wherein a density of the at least one first main pattern in the first region is less than a density of the second main patterns in the second region;
• providing a first imprint material on a first substrate;
• imprinting the first imprint material by using the first template to form a first imprint layer;
• etching the first substrate by using the first imprint layer as a mask to form a second template;
• providing a second imprint material on a material layer;
• imprinting the second imprint material by using the second template to form a second imprint layer;
• and
• etching the material layer by using the second imprint layer as a mask to form a patterned material layer, wherein the patterned material layer comprises at least one third main pattern corresponding to the at least one first main pattern and fourth main patterns corresponding to the second main patterns.