Selectivity of boron hard masks using ion implant

A method comprising:

• forming a Dynamic Random Access Memory (DRAM) structure comprising a plurality of alternating layers of oxide and nitride materials;
• forming a boron-based hardmask over the DRAM structure, wherein the boron-based hardmask comprises at least 90 at. % boron;
• implanting the boron-based hardmask with ions;
• opening the boron-based hardmask with a pattern for a plurality of capacitor holes to be formed in the DRAM structure;
• and
• performing an etch to form the plurality of capacitor holes in the DRAM structure through the openings in the boron-based hardmask, wherein implanting the boron-based hardmask with the ions increases a selectivity of the etch of the DRAM structure relative to the boron-based hardmask.

A method comprising:

• forming a boron-based hardmask over a semiconductor structure, wherein the boron-based hardmask comprises at least 90 at. % boron;
• opening the boron-based hardmask with a pattern for a plurality of holes to be formed in the semiconductor structure;
• tilting a substrate support in a semiconductor processing chamber to tilt the semiconductor structure relative to an ion implant process;
• and
• implanting the boron-based hardmask with ions using the ion implant process wherein tilting the substrate implants the ions at an angle in vertical sidewalls of a plurality of openings in the boron-based hardmask.