A quantum dot light-emitting device, comprising a substrate and a patterned quantum dot layer located on the substrate, wherein each quantum dot of the quantum dot layer comprises a quantum dot body and a first crosslinkable ligand connected to the surface of the quantum dot body;
- and the quantum dot layer is of a structure obtained after the first crosslinkable ligands are subjected to a crosslinking reaction at a first temperature
- wherein the substrate comprises:
- a base substrate, a first electrode located on the base substrate, and a carrier film layer located on the first electrode;
- wherein the quantum dot layer is located on the carrier film layer, and second crosslinkable ligands are connected to a surface of the carrier film layer;
- and
- the quantum dot layer is of a structure obtained after the first crosslinkable ligands and the second crosslinkable ligands are subjected to a crosslinking reaction;
- or, the quantum dot layer is of a structure obtained after a crosslinking reaction occurs between the first crosslinkable ligands and the second crosslinkable ligands, and a crosslinking reaction occurs between first crosslinkable ligands corresponding to adjacent quantum dots.