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US 12,720,918 B2Granted
Semiconductor device having semiconductor structure with holes
AssigneeEnnostar Corporation
InventorsPo-Chou Pan, Shih-Chang Lee, Wei-Jen Hsueh, Sheng-Feng Kuo
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Abstract
A semiconductor device is provided, which includes a substrate, a first semiconductor structure, a plurality of first holes, a first dielectric structure and a second semiconductor structure. The first semiconductor structure is located on the substrate. The first holes are periodically arranged in the first semiconductor structure. The first dielectric structure is filled in one or more of the first holes. The second semiconductor structure is located on the first semiconductor structure.
Claims19
A semiconductor device, comprising:
- a substrate;
- a first semiconductor structure located on the substrate;
- a plurality of first holes periodically arranged in the first semiconductor structure;
- a first dielectric structure filled in one or more of the first holes;
- and
- a second semiconductor structure located on the first semiconductor structure;
- wherein the first dielectric structure comprises a first dielectric layer having a first refractive index and a second dielectric layer having a second refractive index different from the first refractive index.
4 more elements
A semiconductor device, comprising:
- a substrate;
- a first semiconductor layer located on the substrate;
- a plurality of first holes periodically arranged in the first semiconductor layer;
- a first material in the plurality of first holes and having a first refractive index;
- a second material in the plurality of first holes and having a second refractive index different from the first refractive index;
- and
- a second semiconductor layer located on the first semiconductor layer.
4 more elements
Dependencies are inferred from the claim text.