US 12,720,881 B2Granted

Back side illuminated image sensor with reduced sidewall-induced leakage

AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.

InventorsShuang-Ji Tsai, Dun-Nian Yaung, Jen-Cheng Liu, Wen-De Wang, Hsiao-Hui Tseng

Life of this patent

Estimating the term…

Loading patent…

Abstract

Provided is a method of fabricating an image sensor device. An exemplary includes forming a plurality of radiation-sensing regions in a substrate. The substrate has a front surface, a back surface, and a sidewall that extends from the front surface to the back surface. The exemplary method further includes forming an interconnect structure over the front surface of the substrate, removing a portion of the substrate to expose a metal interconnect layer of the interconnect structure, and forming a bonding pad on the interconnect structure in a manner so that the bonding pad is electrically coupled to the exposed metal interconnect layer and separated from the sidewall of the substrate.

Claims20

Dependent claims

A device comprising:

a semiconductor substrate having a front side and an opposing back side and a surface extending from the front side to the back side;
a pixel region disposed within the semiconductor substrate operable to sense radiation from the back side of the semiconductor substrate;
an insulating layer extending from the front side of the semiconductor substrate;
and
a conductive layer including a first portion, a second portion and a third portion, the first portion of the conductive layer extending along the surface of the semiconductor substrate between the front side and the back side of the semiconductor substrate such that the first portion of the conductive layer is disposed on the surface of the semiconductor substrate below the back side of the semiconductor substrate and above the front side of the semiconductor substrate, the second portion of the conductive layer disposed within the insulating layer such that the second portion forms a first conductive bond pad in a first bonding pad region and the third portion of the conductive layer is disposed within the insulating layer such that the third portion forms a second conductive bond pad in a second bonding pad region, wherein the first portion of the conductive layer further extends along the surface of the semiconductor substrate between the front side and the back side of the semiconductor substrate such that the first portion of the conductive layer extends continuously from the first bonding pad region to the second bonding pad region, and wherein the second portion of the conductive layer is electrically isolated from the first portion of the conductive layer.

2 more elements

A device comprising:

a semiconductor substrate having a first side and an opposing second side and a surface extending from the first side to the second side;
a pixel region disposed within the semiconductor substrate;
an insulating layer extending from the second side of the semiconductor substrate;
and
a conductive layer including a first portion, a second portion and a third portion, the first portion of the conductive layer extending along the surface of the semiconductor substrate between the first side and the second side of the semiconductor substrate such that the first portion of the conductive layer is disposed on the surface of the semiconductor substrate below the first side of the semiconductor substrate and above the second side of the semiconductor substrate, the second portion of the conductive layer disposed within the insulating layer such that the second portion forms a first conductive bond pad in a first bonding pad region and the third portion of the conductive layer is disposed within the insulating layer such that the third portion forms a second conductive bond pad in a second bonding pad region, wherein the first portion of the conductive layer further extends along the surface of the semiconductor substrate between the first side and the second side of the semiconductor substrate such that the first portion of the conductive layer extends continuously from the first bonding pad region to the second bonding pad region, and wherein the first, second and third portions of the conductive layer are electrically isolated from each other.

2 more elements

A device comprising:

a substrate having a first side and an opposing second side and a surface extending from the first side to the second side;
a pixel region disposed within the substrate and operable to sense radiation through the first side of the substrate;
an insulating layer disposed over the second side of the substrate;
a conductive layer including a first portion and a second portion, the first portion of the conductive layer extending along the surface of the substrate between the first side and the second side of the substrate such that the first portion of the conductive layer is disposed on the surface of the substrate below the first side of the substrate and above the second side of the substrate, the second portion of the conductive layer disposed within the insulating layer such that the second portion forms a conductive bond pad, wherein the second portion of the conductive layer is electrically isolated from the first portion of the conductive layer;
and
an oxide material-containing layer extending continuously from over the pixel region to along the surface of the substrate and to the second portion of the conductive layer.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application: 18/438,808Filed 12 Feb 2024 · continuation
Priority: 16 Feb 2011
Published: US 2024/0421177 A119 Dec 2024
Granted: 25 Aug 2026
Term ends: Not estimatedThe source records don’t support an estimate.

Classification13 codes

H10F 39/026
Manufacture or treatment of image sensors covered by group H10F39/12: wafer-level processing
H10F 39/011
Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors…:…
H10F 39/014
Manufacture or treatment of image sensors covered by group H10F39/12: of CMOS image sensors
H10F 39/182
Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors: colour image sensors

Family

Application13/028,471Parent of this division · filed 16 Feb 2011
Application14/875,002Parent of this continuation · filed 5 Oct 2015
US 9,165,970 B2Parent of this division · filed 20 Oct 2015
Application15/431,132Parent of this continuation · filed 13 Feb 2017
US 9,570,497 B2Parent of this continuation · filed 14 Feb 2017
Application16/728,018Parent of this continuation · filed 27 Dec 2019
US 10,566,378 B2Parent of this continuation · filed 18 Feb 2020
Application17/154,912Parent of this continuation · filed 21 Jan 2021
US 11,476,295 B2Parent of this continuation · filed 18 Oct 2022
US 2024/0421177 A1Pre-grant publication · published 19 Dec 2024
US 11,901,396 B2Parent of this continuation
Application14/875,002Parent of this division
US 2012/0205769 A1Published application
US 2016/0027836 A1Published application
US 2017/0154918 A1Published application
US 2020/0144325 A1Published application
US 2021/0143208 A1Published application
US 12,720,881 B2This patent

From the US filing history. Foreign family members aren’t listed.