Fast recovery diode and method for manufacturing the same

Abstract

A fast recovery diode includes a substrate; an epitaxial layer formed on the substrate; a P-type low-concentration doping region formed in an upper portion of the epitaxial layer and a P-type high-concentration doping region formed on the P-type low-concentration doping region; a P-type guard ring formed in the upper portion of the epitaxial layer to surround the P-type low-concentration doping region and P-type high-concentration doping region; a field oxide layer formed on the P-type guard ring and the P-type high-concentration doping region; an anode electrode formed to overlap the P-type high-concentration doping region and a portion of the field oxide layer; and a cathode electrode formed below the substrate.

Dependencies are inferred from the claim text.