Semiconductor device and method for manufacturing the same

A manufacturing method of nitride-based semiconductor circuit, comprising:

• providing a nitride-based semiconductor carrier;
• disposing a first nitride-based semiconductor layer on the nitride-based semiconductor carrier;
• disposing a second nitride-based semiconductor layer on the first nitride-based semiconductor layer;
• disposing a source connector, a gate connector, and a drain connector on the second nitride-based semiconductor layer;
• disposing one or more interconnections, wherein the interconnections go through the first nitride-based semiconductor layer, and the second nitride-based semiconductor layer, and electrically connect the nitride-based semiconductor carrier, and orthographic projections of the interconnections onto the nitride-based semiconductor carrier do not overlap with orthographic projections of the source connector, the gate connector, and the drain connector onto the nitride-based semiconductor carrier;
• electrically connecting the source connector with a connection line;
• electrically connecting the nitride-based semiconductor carrier with a power supply line via the interconnections;
• and
• applying a potential differential difference between the power supply line and the connection line, such that the potential difference is applied between the source connector and the nitride-based semiconductor carrier,
• wherein a heterojunction is formed between the first and second nitride-based semiconductor layers, and the gate connector is located between the source connector and the drain connector,
• wherein the nitride-based semiconductor carrier comprises:
• a substrate;
• a buffer layer disposed on the substrate;
• and
• a third nitride-based semiconductor layer disposed on the buffer layer, and the third nitride-based semiconductor layer is doped with p-type dopant, and
• wherein the interconnection is electrically connected to the substrate.

A nitride-based semiconductor circuit, comprising:

• a nitride-based semiconductor carrier;
• a first nitride-based semiconductor layer disposed over the semiconductor carrier;
• a second nitride-based semiconductor layer disposed on the first nitride-based semiconductor layer;
• a source connector disposed on the second nitride-based semiconductor layer;
• a gate connector disposed on the second nitride-based semiconductor layer;
• a drain connector disposed on the second nitride-based semiconductor layer;
• a connection line electrically connected to the source connector;
• a power supply line electrically connected to the nitride-based semiconductor carrier;
• and
• one or more interconnections, wherein the interconnections go through the first nitride-based semiconductor layer, and the second nitride-based semiconductor layer, and electrically connect the nitride-based semiconductor carrier, the power supply line is electrically connected to the interconnections, and orthographic projections of the interconnections onto the nitride-based semiconductor carrier do not overlap with orthographic projections of the source connector, the gate connector, and the drain connector onto the nitride-based semiconductor carrier,
• wherein a heterojunction is formed between the first and the second nitride-based semiconductor layers, and the gate connector is located between the source connector and the drain connector, and a potential difference is applied between the power supply line and the connection line, such that the potential difference is applied between the source connector and the nitride-based semiconductor carrier,
• wherein the source connector, the gate connector, and the drain connector are arranged at intervals in sequence along a first direction, and the orthographic projections of the source connector and the drain connector onto the nitride-based semiconductor carrier have a first edge and a second edge that face away from the orthographic projection of the gate connector onto the nitride-based semiconductor carrier, respectively, and
• wherein the orthographic projections of the interconnections onto the nitride-based semiconductor carrier extend along the first direction, and have a third edge and a fourth edge that are aligned with the first edge and the second edge along a second direction, respectively, wherein the first direction and the second direction are perpendicular to each other.