3D memory cell with dual-side contacts and method of fabrication

A memory device, comprising:

• a stack structure comprising alternating first layers and dielectric layers that are vertically arranged, wherein the stack structure has a first surface and a second surface opposite to the first surface;
• first contact structures comprising conductive material, wherein the first contact structures penetrate vertically from the first surface into the stack structure to be in contact respectively with a first portion of first layers;
• and
• second contact structures comprising conductive material, wherein each of the second contact structures penetrates vertically from the second surface into the stack structure to be in contact respectively with a remainder portion of conductive layers other than the first portion of the first layers, wherein the first contact structures are vertically spaced apart from the respective second contract structures.

A system, comprising:

• a memory device configured to store data, the memory device comprising:
• a stack structure comprising alternating first layers and dielectric layers that are vertically arranged, wherein the stack structure has a first surface and a second surface opposite to the first surface;
• first contact structures comprising conductive material, wherein each of the first contact structures penetrates vertically from the first surface into the stack structure to be in contact respectively with a first portion of first layers;
• and
• second contact structures comprising conductive material, wherein each of the second contact structures penetrates vertically from the second surface into the stack structure to be in contact respectively with a remainder portion of conductive layers other than the first portion of the first layers, wherein the first contact structures are vertically spaced apart from the respective second contract structures;
• and
• a memory controller that electrically connects to and controls the memory device.