US 12,720,733 B2 · Semiconductor structure, its read/write controlling and method of making the same

Abstract

The disclosed semiconductor structure includes: a substrate and a data line on the substrate, the data line extends along a first direction; the first transistor and the second transistor located on the first transistor's side away from the data line; each of the first transistor and the second transistor includes: a semiconductor column, the semiconductor column is located on a part of the top surface of the data line and extends along the third direction; an isolation structure inside the semiconductor column; along the second direction, the thickness of the isolation structure in different regions in the third direction is different, and the isolation structure runs through the semiconductor columns, and two of the first, the second and the third directions intersect each other. This improves the sensitivity of the second transistor to the change in current in the first transistor while reducing the leakage current in the first transistor.

Claims20

Dependent claims

A semiconductor structure, comprising:

a substrate and a data line on the substrate, wherein the data line extends along a first direction;
a first transistor on the data line and a second transistor on a side of the first transistor away from the data line;
wherein, the first transistor comprises a first semiconductor column, and the second transistor comprises a second semiconductor column, wherein the first semiconductor column and the second semiconductor column are disposed on a part of a top surface of the data line and extend along a third direction;
and
an isolation structure disposed inside the first and second semiconductor columns;
wherein, a thickness of the isolation structure in a third direction is different in different regions along a second direction,
wherein the isolation structure penetrates the first and second semiconductor columns, and
wherein two of the first direction, the second direction and the third direction intersect.

5 more elements

A method of fabricating a semiconductor structure, comprising:

providing an initial substrate;
forming a data line and a first transistor in the initial substrate, wherein the data line extends along a first direction, wherein one end of the first transistor is connected to the data line, and wherein the initial substrate is a substrate;
forming a second transistor on a side of the first transistor away from the data line;
wherein the first transistor comprises a first semiconductor column, and the second transistor comprises a second semiconductor column, wherein the first semiconductor column is disposed on a part of a top surface of the data line and extends along a third direction;
forming an isolation structure inside the first semiconductor column, along a second direction, a thickness of the isolation structure in each of different regions of the third direction is different, and wherein the isolation structure penetrates the first and second semiconductor columns, wherein two of the first direction, the second direction and the third direction intersect.

2 more elements

Dependencies are inferred from the claim text.

Semiconductor structure, its read/write controlling and method of making the same

Life of this patent

Semiconductor structure, its read/write controlling and method of making the same

Life of this patent

Abstract

Claims20