Semiconductor device and fabricating method thereof

A semiconductor device, comprising:

• a substrate;
• a capacitor structure disposed on the substrate, the capacitor structure comprising a plurality of columnar bottom electrodes, a capacitor dielectric layer, and a top electrode layer;
• a dielectric layer, disposed on the substrate;
• a plurality of storage node pads, separately disposed in the dielectric layer and respectively in direct contact with the columnar bottom electrodes;
• and
• an insulating layer, disposed on the storage node pads, the insulating layer overlaying and in direct contact with a surface of the dielectric layer and a partial surface of each of the storage node pads, wherein the capacitor dielectric layer is partially sandwiched between the insulating layer and each of the columnar bottom electrodes in a direction parallel to the substrate, the capacitor dielectric layer directly contacts a top portion and a sidewall of the insulating layer, and the capacitor dielectric layer direct contacts each of the storage node pads.

A semiconductor device, comprising:

• a substrate, comprising an active area;
• a bit line, disposed on the substrate;
• a bit line contact disposed below the bit line and extending into the active area;
• a dielectric layer, disposed on the bit line;
• a plurality of storage node pads, separately disposed in the dielectric layer and in direct contact with a plurality of storage node contacts respectively;
• a capacitor structure disposed on the storage node pads, the capacitor structure comprising a plurality of columnar bottom electrodes, a capacitor dielectric layer, and a top electrode layer disposed in sequence;
• and
• an insulating layer, disposed on the storage node pads, the insulating layer overlaying and in direct contact with a surface of the dielectric layer and a partial surface of each of the storage node pads, wherein the capacitor dielectric layer directly contacts a top portion and a sidewall of the insulating layer.