Semiconductor substrate, method for designing semiconductor substrate, and apparatus for manufacturing semiconductor substrate
AssigneeNEC Corporation
InventorNaoki Oshima
Life of this patent
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Abstract
A semiconductor substrate according to the present disclosure includes a high-frequency circuit, in which a size of each of dummy metal pieces and an interval of an arrangement of the dummy metal pieces constituting a dummy metal piece group in a first area which is inside a line constituting a high-frequency circuit is n times larger than that of a dummy metal piece group outside a peripheral area of the high-frequency circuit; and the number of the dummy metal pieces in the first area is 1/n2 of the number of the dummy metal pieces outside the peripheral area, where n is a real number greater than one.
Claims12
A semiconductor substrate comprising a high-frequency circuit, wherein
- a size of each of dummy metal pieces constituting a dummy metal piece group located in a first area which is inside a line constituting a high-frequency circuit is n times larger than that of a dummy metal piece group located outside a peripheral area of the high-frequency circuit;
- an interval of an arrangement of the dummy metal pieces constituting the dummy metal piece group located in the first area is n times larger than that of the dummy metal piece group located outside the peripheral area of the high-frequency circuit;
- and the number of the dummy metal pieces constituting the dummy metal piece group located in the first area is 1/n2 of the number of the dummy metal pieces constituting the dummy metal piece group located outside the peripheral area of the high-frequency circuit, where n is a real number greater than one.
A method for designing a semiconductor substrate comprising a high-frequency circuit and a dummy metal piece group, comprising:
- setting a mesh size for an analysis target, and calculating a mesh number;
- setting a size of each of dummy metal pieces constituting the dummy metal piece group so as to become n times larger, setting an interval of an arrangement of the dummy metal pieces constituting the dummy metal piece group so as to become n times larger, and setting the number of the dummy metal pieces constituting the dummy metal piece group so as to become 1/n2 when a required memory amount calculated from the mesh number is larger than a memory amount that can be allocated from a calculator, wherein
- n is a real number greater than one.
An apparatus for manufacturing a semiconductor substrate comprising a high-frequency circuit and a dummy metal piece group, comprising:
- an analysis/determination unit, a design unit, a communication unit, and a manufacturing unit, wherein
- the analysis/determination unit is configured to set a mesh size for an analysis target, calculates a mesh number, and determines whether or not a required memory amount calculated from the mesh number is larger than a memory amount that can be allocated from a calculator,
- the design unit is configured to design the dummy metal piece group so that:
- a size of each of dummy metal pieces constituting the dummy metal piece group becomes n times larger;
- an interval of an arrangement of the dummy metal pieces constituting the dummy metal piece group becomes n times larger;
- and the number of the dummy metal pieces constituting the dummy metal piece group becomes 1/n2,
- n is a real number greater than one,
- the communication unit is configured to transmit/receive design data, and
- the manufacturing unit is configured to manufacture a semiconductor substrate based on the design data.
Dependencies are inferred from the claim text.