Temperature-stable MEMS resonator
AssigneeKYOCERA Technologies Oy
InventorsVille Saarela, Matias Perttilä, Antti Jaakkola, Aarne Oja, Panu Koppinen, Antti Rautiainen
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Abstract
A MEMS (microelectromechanical system) resonator (150) comprising a substrate (105), a resonator element (100), and a cavity (110). The resonator element (100) is separated from the substrate (105) by said cavity (110), and the resonator element (100) comprises a layer of single-crystalline silicon (101). The layer of single-crystalline silicon (101) is doped with phosphorus atoms to obtain a specific doping profile.
Claims17
A MEMS, microelectromechanical system, resonator comprising:
- a substrate;
- a resonator element;
- and
- a cavity, wherein
- the resonator element is separated from the substrate by said cavity, and wherein the resonator element comprises a layer of single-crystalline silicon, wherein
- the layer of single-crystalline silicon is doped with phosphorus atoms where the concentration ndop of the phosphorus atoms is:
- (i) within the range from 1.99×1020 cm−3 to 2.97×1020 cm−3 at d/tDEV=0.1 and
- within the range from 1.20×1020 cm−3 to 1.78×1020 cm−3 at d/tDEV=0.9 or
- (ii) within the range from 1.20×1020 cm−3 to 1.80×1020 cm−3 at d/tDEV=0.1 and
- within the range from 2.02×1020 cm−3 to 2.97×1020 cm−3 at d/tDEV=0.9 or
- (iii) within the range from 2.08×1020 cm−3 to 2.97×1020 cm−3 at d/tDEV=0.1,
- within the range from 1.20×1020 cm−3 to 1.86×1020 cm−3 at d/tDEV=0.5, and
- within the range from 2.08×1020 cm−3 to 2.97×1020 cm−3 at d/tDEV=0.9
- where d is the distance between a position within the layer of single-crystalline silicon and the top surface of the layer of single-crystalline silicon and tDEV is the thickness of the layer of single-crystalline silicon, wherein the layer of single-crystalline silicon forms more than 50% of the resonator element by mass.
A wafer comprising one or more MEMS resonators, wherein each MEMS resonator comprises:
- a substrate;
- a resonator element;
- and
- a cavity, wherein
- the resonator element is separated from the substrate by said cavity, and wherein the resonator element comprises a layer of single-crystalline silicon, wherein
- the layer of single-crystalline silicon is doped with phosphorus atoms where the concentration ndop of the phosphorus atoms is
- (i) within the range from 1.99×1020 cm−3 to 2.97×1020 cm−3 at d/tDEV=0.1 and
- within the range from 1.20×1020 cm−3 to 1.78×1020 cm−3 at d/tDEV=0.9
- or
- (ii) within the range from 1.20×1020 cm−3 to 1.80×1020 cm−3 at d/tDEV=0.1 and
- within the range from 2.02×1020 cm−3 to 2.97×1020 cm−3 at d/tDEV=0.9 or
- (iii) within the range from 2.08×1020 cm−3 to 2.97×1020 cm−3 at d/tDEV=0.1,
- within the range from 1.20×1020 cm−3 to 1.86×1020 cm−3 at d/tDEV=0.5, and
- within the range from 2.08×1020 cm−3 to 2.97×1020 cm−3 at d/tDEV=0.9
- where d is the distance between a position within the layer of single-crystalline silicon and the top surface of the layer of single-crystalline silicon and tDEV is the thickness of the layer of single-crystalline silicon, wherein the layer of single-crystalline silicon forms more than 50% of the resonator element by mass.
Dependencies are inferred from the claim text.