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US 12,719,426 B2Granted
Field effect transistor (FET) transconductance device with varying gate lengths
AssigneeQorvo US, Inc.
InventorKevin Wesley Kobayashi
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Abstract
A field effect transistor (FET) transconductance device with varying gate lengths is disclosed. In one aspect, the varying effective gate lengths are used in a differential architecture to obtain linear even and odd order operation simultaneously. In a particular aspect, the effective gate lengths may be varied according to a differential Multi-Tanh-like architecture. This variation of effective gate lengths enables a compact implementation particularly as compared to varying gate width or emitter areas while also providing linear even and odd order operation simultaneously.
Claims19
A transconductor comprising:
- a first voltage level input;
- a first plurality of field effect transistors (FETs), each of the first plurality of FETs coupled to the first voltage level input and electrically parallel to one another, the first plurality of FETs comprising:
- a first FET comprising a first source and a first effective gate length, wherein the first effective gate length includes a first variable other than gate length that controls effective transconductance;
- and
- a second FET comprising a second source and a second effective gate length different than the first effective gate length, wherein the second effective gate length includes the first variable other than gate length that controls the effective transconductance;
- a second voltage level input;
- and
- a second plurality of FETs, equal in number to the first plurality of FETs, each of the second plurality of FETs coupled to the second voltage level input and electrically parallel to one another, the second plurality of FETs comprising:
- a third FET comprising a third source coupled to the first source and a third effective gate length equal to the second effective gate length;
- and
- a fourth FET comprising a fourth source coupled to the second source and a fourth effective gate length equal to the first effective gate length.
8 more elements
Dependencies are inferred from the claim text.