Profile simulation calibration with in-situ sensor data
AssigneeTokyo Electron Limited
InventorsJun Shinagawa, Inga Kuznetsova, Shyam Sridhar, Peter Lowell George Ventzek
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Abstract
A method of profile simulator calibration is provided. The method includes executing a plasma recipe on a wafer in a processing chamber. In-situ plasma sensor data are collected by in-situ plasma sensors while the plasma recipe is executed. Estimated plasma parameters are obtained based on the in-situ plasma sensor data. A predicted profile of the wafer is obtained by inputting the estimated plasma parameters into a profile simulator. A measured profile of the wafer is obtained using wafer metrology after executing the plasma recipe. The profile simulator is calibrated by comparing the predicted profile with the measured profile.
Claims20
A method of profile simulator calibration, the method comprising:
- executing a plasma recipe on a wafer in a processing chamber;
- collecting in-situ plasma sensor data by in-situ plasma sensors while executing the plasma recipe;
- obtaining estimated plasma parameters based on the in-situ plasma sensor data;
- obtaining a predicted profile of the wafer by inputting the estimated plasma parameters into a profile simulator;
- obtaining a measured profile of the wafer using wafer metrology after executing the plasma recipe;
- and
- calibrating the profile simulator by comparing the predicted profile with the measured profile.
An apparatus, comprising a controller including a processor that is programmed to:
- execute a plasma recipe on a wafer in a processing chamber;
- collect in-situ plasma sensor data by in-situ plasma sensors while executing the plasma recipe;
- obtain estimated plasma parameters based on the in-situ plasma sensor data;
- obtain a predicted profile of the wafer by inputting the estimated plasma parameters into a profile simulator;
- obtain a measured profile of the wafer using wafer metrology after executing the plasma recipe;
- and
- calibrate the profile simulator by comparing the predicted profile with the measured profile.
Dependencies are inferred from the claim text.