Chamber with enhancement liner and methods for downstream residue management

A processing method, comprising:

• flowing a first cleaning gas or a plasma precursor into a processing region of a semiconductor processing chamber, the semiconductor processing chamber comprising:
• an enhancement liner positioned within the semiconductor processing chamber comprising an interior portion, an exterior portion, and a plurality of apertures, wherein the enhancement liner defines a liner volume between the interior portion and the exterior portion, wherein a distribution gap is defined between the enhancement liner and a sidewall of the semiconductor processing chamber, wherein the exterior portion of the enhancement liner comprises a laterally extending portion and a vertically extending portion, and wherein the laterally extending portion extends from the sidewall of the semiconductor processing chamber towards a substrate support disposed in the processing region;
• a faceplate disposed vertically above the enhancement liner;
• a second cleaning gas source coupled with the distribution gap through an inlet in the sidewall of the semiconductor processing chamber;
• and
• flowing a second cleaning gas from the second cleaning gas source into the distribution gap through the inlet;
• and
• exhausting the second cleaning gas through the liner volume.