Substrate processing apparatus

A substrate processing apparatus comprising:

• a chamber;
• a support member inside the chamber;
• a center bias electrode at an inner center region of the support member;
• an edge bias electrode at an inner edge region of the support member;
• a center power supply unit connected to the center bias electrode and configured to output a center start voltage at a start point of a control period and a center end voltage at an end point of the control period;
• and
• an edge power supply unit connected to the edge bias electrode and configured to output an edge control voltage comprising an edge start voltage at the start point and an edge end voltage at the end point,
• wherein an angle of a straight line from the edge start voltage to the edge end voltage is a positive value and greater than an angle of a straight line from the center start voltage to the center end voltage.

A substrate processing apparatus comprising:

• a chamber comprising a process space;
• a support member inside the chamber;
• a plasma excitation member configured to apply energy to excite plasma within the process space;
• a center bias electrode at an inner central region of the support member;
• an edge bias electrode at an inner edge region of the support member;
• a center power supply unit connected to the center bias electrode and configured to output a center start voltage at a start point of a control period and a center end voltage at an end point of the control period;
• and
• an edge power supply unit connected to the edge bias electrode and configured to output an edge start voltage at the start point and an edge end voltage at the end point,
• wherein a value obtained by subtracting the edge start voltage from the edge end voltage is greater than a value obtained by subtracting the center start voltage from the center end voltage, and an absolute value of the edge start voltage is greater than an absolute value of the center start voltage, and
• wherein an absolute value of the edge start voltage is greater than an absolute value of the edge end voltage.