Plasma processing method and plasma processing apparatus
AssigneeTokyo Electron Limited
InventorGen Tamamushi
Life of this patent
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Abstract
A plasma processing method according to the present disclosure includes disposing a substrate on a substrate support, supplying, into a chamber, a processing gas for processing the substrate, generating, in the chamber, a plasma from the processing gas by using a first RF signal and a second RF signal, and applying a bias signal to the substrate support, and generating the plasma includes superimposing the second RF signal on the first RF signal based on a timing when the bias signal is applied to the substrate support.
Claims24
A plasma processing method for performing plasma processing on a substrate in a plasma processing apparatus including a chamber, and a substrate support that is provided in the chamber and is configured to support the substrate, the plasma processing method comprising:
- disposing a substrate on the substrate support;
- supplying, into the chamber, a processing gas for processing the substrate;
- generating, in the chamber, a plasma from the processing gas by using a first source RF signal and a second source RF signal;
- and
- supplying a bias signal to the substrate support, wherein generating the plasma includes superimposing the second source RF signal on the first source RF signal based on a timing when the bias signal is supplied to the substrate support.
A plasma processing apparatus comprising:
- a chamber;
- a substrate support that is provided in the chamber and is configured to support a substrate;
- and
- a controller, wherein
- the controller executes a control of
- disposing the substrate on the substrate support,
- supplying, into the chamber, a processing gas for processing the substrate,
- generating, in the chamber, a plasma of the processing gas by using a first source RF signal and a second source RF signal,
- applying a bias signal to the substrate support, and
- superimposing the second source RF signal on the first source RF signal based on a timing when the bias signal is applied to the substrate support.
Dependencies are inferred from the claim text.