Integrated assemblies, and methods of forming integrated assemblies

A method of forming an integrated assembly, comprising:

• forming a first stack of alternating first and second materials over a source structure;
• the second material being a first insulative material;
• a region of the first stack being a memory array region and having a first memory-block-region laterally adjacent a second memory-block-region;
• forming a first array of cell-pillar-openings within the first memory-block-region, a second array of the cell-pillar-openings within the second memory-block-region, and a first linear string of the cell-pillar-openings within a first separator-structure-region between the first and second memory-block-regions, the cell-pillar-openings of the first separator-structure-region having a first diameter;
• the cell-pillar-openings extending through the first stack;
• the first linear string extending along a first direction;
• protecting interior regions of the cell-pillar-openings within the first and second arrays with sacrificial material while leaving interior regions of the cell-pillar-openings of the first linear string exposed;
• recessing the first material from the exposed interior regions of the cell-pillar-openings of the linear string to merge together all the cell-pillar-openings of the first linear string with one another along the first direction;
• removing the sacrificial material;
• forming cell materials within the cell-pillar-openings of the first and second arrays, and within the merged cell-pillar-openings of the first linear string;
• the cell materials within the merged cell-pillar-openings being incorporated into a separator structure;
• the separator structure comprising a first region comprising a second stack which comprises alternating first and second insulative levels, the second insulative levels comprising the second material, a second region of the separator structure being offset from the first region with the second stack being absent from the second region, the second region extending within a wordline staircase region and having a second linear string of openings extending along the first direction and having a second diameter greater than the first diameter with all the openings comprised by the second linear string being merged together, the first and second linear strings being joined to one another;
• forming pillars of a first conductive material within the openings comprised by the second linear string and filling a remaining volume of the second region of the separator structure with a second insulative material that laterally surrounds each of the pillars of the first conductive material;
• forming a first slit on an opposing side of the first memory-block-region from the separator structure, and forming a second slit on an opposing side of the second memory-block-region from the separator structure;
• removing the first material with etchant flowed into the first and second slits to form voids;
• forming a second conductive material within the voids;
• and
• forming panels within the first and second slits.