Write control method based on write behavior prediction, memory storage device, and memory control circuit unit

A memory storage device, comprising:

• a connection interface unit, configured to couple to a host system;
• a rewritable non-volatile memory module;
• and
• a memory control circuit unit, coupled to the connection interface unit and the rewritable non-volatile memory module,
• wherein the memory control circuit unit is configured to:
• monitor a first data write behavior comprising writing first data from a host system to the rewritable non-volatile memory module to obtain a first measurement parameter reflecting an actual write speed of the first data;
• query a management table to obtain a first target parameter reflecting a preset write speed corresponding to the first data write behavior;
• predict a second data write behavior comprising writing second data from the host system to the rewritable non-volatile memory module according to the first data write behavior;
• dynamically adjust write control parameters comprising adjusting a first write parameter and adjusting a second write parameter according to the first measurement parameter, the first target parameter, and the predicted second data write behavior;
• and
• send a write command sequence to the rewritable non-volatile memory module according to the write control parameters, wherein the write command sequence is configured to instruct the rewritable non-volatile memory module to perform a data write comprising storing the second data using the write control parameters,
• wherein the second data comprises first partial data and second partial data, the first write parameter is configured to control only the first partial data being stored based on a first write mode to the rewritable non-volatile memory module,
• the second write parameter is configured to control only the second partial data being stored based on a second write mode to the rewritable non-volatile memory module, and
• a total number of bit stored in one memory cell within the rewritable non-volatile memory module, based on the first write mode is less than a total number of bit stored in an other memory cell within the rewritable non-volatile memory module, based on the second write mode,
• wherein a data write speed of the host system is controlled to be between the actual write speed and the preset write speed according to the write control parameters.

A memory control circuit unit, configured to control a rewritable non-volatile memory module, the memory control circuit unit comprising:

• a host interface, configured to couple to a host system;
• a memory interface, configured to couple to the rewritable non-volatile memory module;
• and
• a memory management circuit, coupled to the host interface and the memory interface,
• wherein the memory management circuit is configured to:
• monitor a first data write behavior comprising writing first data from a host system to the rewritable non-volatile memory module to obtain a first measurement parameter reflecting an actual write speed of the first data;
• query a management table to obtain a first target parameter reflecting a preset write speed corresponding to the first data write behavior;
• predict a second data write behavior comprising writing second data from the host system to the rewritable non-volatile memory module according to the first data write behavior;
• dynamically adjust write control parameters comprising adjusting a first write parameter and adjusting a second write parameter according to the first measurement parameter, the first target parameter, and the predicted second data write behavior;
• and
• send a write command sequence to the rewritable non-volatile memory module according to the write control parameters, wherein the write command sequence is configured to instruct the rewritable non-volatile memory module to perform a data write comprising storing the second data using the write control parameters,
• wherein the second data comprises first partial data and second partial data, the first write parameter is configured to control only the first partial data being stored based on a first write mode to the rewritable non-volatile memory module,
• the second write parameter is configured to control only the second partial data being stored based on a second write mode to the rewritable non-volatile memory module, and
• a total number of bit stored in one memory cell within the rewritable non-volatile memory module, based on the first write mode is less than a total number of bit stored in an other memory cell within the rewritable non-volatile memory module, based on the second write mode,
• wherein a data write speed of the host system is controlled to be between the actual write speed and the preset write speed according to the write control parameters.