US 12,717,431 B2Granted

Display device having transistors and light-emitting element

AssigneeSemiconductor Energy Laboratory Co., Ltd.

InventorsKensuke Yoshizumi, Yoshiaki Oikawa

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Abstract

A convenient electronic device is provided. An electronic device from which a user can easily read the displayed data is provided. The user can read data with a small motion. A housing of the electronic device includes a first portion positioned on a front surface of the housing, a second portion positioned on a side surface of the housing, a first band attachment portion, and a second band attachment portion. The second portion is configured to display an image. The first band attachment portion is positioned on the side surface on the top side when seen from the front surface side of the housing. The second portion and the second band attachment portion are positioned on the side surface on the bottom side when seen from the front surface side of the housing. The first portion is configured to display an image or includes at least one of an hour hand, a minute hand, and a second hand.

Claims14

Dependent claims

A display device comprising:

a first semiconductor layer;
a first insulating layer over the first semiconductor layer;
a first conductive layer over the first insulating layer;
a second insulating layer over the first conductive layer;
a second conductive layer over the second insulating layer;
a third insulating layer over the second conductive layer;
a second semiconductor layer over the third insulating layer;
a fourth insulating layer over the second semiconductor layer;
a third conductive layer over the fourth insulating layer;
a fifth insulating layer over the third conductive layer;
a fourth conductive layer over the fifth insulating layer;
a sixth insulating layer over the fourth conductive layer;
and
a fifth conductive layer over the sixth insulating layer,
wherein the first semiconductor layer comprises a channel formation region of a first transistor,
wherein the first insulating layer comprises a region as a gate insulating layer of the first transistor,
wherein the first conductive layer comprises a region as a gate electrode of the first transistor,
wherein the second insulating layer comprises a region as a first interlayer insulating layer,
wherein the second conductive layer comprises a region as a first gate electrode of a second transistor, the first gate electrode being electrically connected to a source or a drain of the first transistor,
wherein the third insulating layer comprises a region as a first gate insulating layer of the second transistor,
wherein the second semiconductor layer comprises a channel formation region of the second transistor,
wherein the fourth insulating layer comprises a region as a second gate insulating layer of the second transistor,
wherein the third conductive layer comprises a region as a second gate electrode of the second transistor,
wherein the fifth insulating layer comprises a region as a second interlayer insulating layer,
wherein a source or a drain of the second transistor is electrically connected to the fifth conductive layer through the fourth conductive layer,
wherein the sixth insulating layer comprises a resin,
wherein the fifth conductive layer comprises a region as a pixel electrode of a light-emitting element, and
wherein the third conductive layer is electrically connected to the second conductive layer.

25 more elements

A display device comprising:

a first semiconductor layer;
a first insulating layer over the first semiconductor layer;
a first conductive layer over the first insulating layer;
a second insulating layer over the first conductive layer;
a second conductive layer over the second insulating layer;
a third insulating layer over the second conductive layer;
a second semiconductor layer over the third insulating layer;
a fourth insulating layer over the second semiconductor layer;
a third conductive layer over the fourth insulating layer;
a fifth insulating layer over the third conductive layer;
a fourth conductive layer over the fifth insulating layer;
a sixth insulating layer over the fourth conductive layer;
and
a fifth conductive layer over the sixth insulating layer,
wherein the first semiconductor layer comprises a channel formation region of a first transistor,
wherein the first insulating layer comprises a region as a gate insulating layer of the first transistor,
wherein the first conductive layer comprises a region as a gate electrode of the first transistor,
wherein the second insulating layer comprises a region as a first interlayer insulating layer,
wherein the second conductive layer comprises a region as a first gate electrode of a second transistor, the first gate electrode being electrically connected to a source or a drain of the first transistor,
wherein the third insulating layer comprises a region as a first gate insulating layer of the second transistor,
wherein the second semiconductor layer comprises a channel formation region of the second transistor,
wherein the fourth insulating layer comprises a region as a second gate insulating layer of the second transistor,
wherein the third conductive layer comprises a region as a second gate electrode of the second transistor,
wherein the fifth insulating layer comprises a region as a second interlayer insulating layer,
wherein a source or a drain of the second transistor is electrically connected to the fifth conductive layer through the fourth conductive layer,
wherein the fifth conductive layer comprises a region as a pixel electrode of a light-emitting element,
wherein the fifth conductive layer comprises a light-transmitting conductive material, and
wherein the third conductive layer is electrically connected to the second conductive layer.

25 more elements

A display device comprising:

a first semiconductor layer;
a first insulating layer over the first semiconductor layer;
a first conductive layer over the first insulating layer;
a second insulating layer over the first conductive layer;
a second conductive layer over the second insulating layer;
a third insulating layer over the second conductive layer;
a second semiconductor layer over the third insulating layer;
a fourth insulating layer over the second semiconductor layer;
a third conductive layer over the fourth insulating layer;
a fifth insulating layer over the third conductive layer;
a fourth conductive layer over the fifth insulating layer;
a sixth insulating layer over the fourth conductive layer;
and
a fifth conductive layer over the sixth insulating layer,
wherein the first semiconductor layer comprises a channel formation region of a first transistor,
wherein the first insulating layer comprises a region as a gate insulating layer of the first transistor,
wherein the first conductive layer comprises a region as a gate electrode of the first transistor,
wherein the second insulating layer comprises a region as a first interlayer insulating layer,
wherein the second conductive layer comprises a region as a first gate electrode of a second transistor, the first gate electrode being electrically connected to a source or a drain of the first transistor,
wherein the third insulating layer comprises a region as a first gate insulating layer of the second transistor,
wherein the second semiconductor layer comprises a channel formation region of the second transistor,
wherein the fourth insulating layer comprises a region as a second gate insulating layer of the second transistor,
wherein the third conductive layer comprises a region as a second gate electrode of the second transistor,
wherein the third conductive layer is electrically connected to the second conductive layer,
wherein the fifth insulating layer comprises a region as a second interlayer insulating layer,
wherein the fourth conductive layer is electrically connected to a source or a drain of the second transistor through a contact hole in the fifth insulating layer,
wherein the fifth conductive layer comprises a region as a pixel electrode of a light-emitting element, and
wherein the fifth conductive layer is electrically connected to the fourth conductive layer through a contact hole in the sixth insulating layer.

25 more elements

Dependencies are inferred from the claim text.

Facts

Application: 18/217,798Filed 3 Jul 2023 · continuation
Priority: JP 2016-1358708 Jul 2016
Published: US 2023/0359151 A19 Nov 2023
Granted: 25 Aug 2026
Term ends: Not estimatedThe source records don’t support an estimate.

Classification10 codes

G06F 3/041
Arrangements for converting the position or the displacement of a member into a coded form: digitisers, e.g. for touch screens or touch pads,…
G02F 1/1333
Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements: constructional arrangements; Manufacturing methods
G02F 1/133305
Constructional arrangements; Manufacturing methods: flexible substrates, e.g. plastics, organic film
H10K 59/1213
Characterised by the geometry or disposition of pixel elements: the pixel elements being TFTs

Family

Application15/642,573Parent of this continuation · filed 6 Jul 2017
Application16/800,210Parent of this continuation · filed 25 Feb 2020
US 2023/0359151 A1Pre-grant publication · published 9 Nov 2023
US 2018/0011447 A1Published application
US 2020/0292998 A1Published application
US 12,717,431 B2This patent

From the US filing history. Foreign family members aren’t listed.