Method of correcting overlay, method of controlling semiconductor process, and semiconductor processing apparatus

A method of controlling a semiconductor process, the method comprising:

• forming a first layer and a second layer sequentially stacked on at least a partial region of a wafer;
• generating correction parameters for correcting an overlay error of a plurality of second patterns included in the second layer based on a plurality of first patterns included in the first layer;
• and
• controlling a photolithography process for forming the plurality of second patterns based on the correction parameters,
• wherein the plurality of first patterns are formed by a first photolithography process performed on a plurality of first areas included in the first layer, and the plurality of second patterns are formed by a second photolithography process performed on a plurality of second areas included in the second layer,
• wherein two or more second areas adjacent to each other of the plurality of second areas are disposed on each of the plurality of first areas, and
• wherein the second photolithography process is controlled based on a first correction parameter commonly applied to the two or more second areas and a second correction parameter individually applied to the two or more second areas.

A semiconductor processing apparatus, comprising:

• a light source configured to output extreme ultraviolet light;
• an optical system configured to reflect the extreme ultraviolet light output by the light source from a mask and to allow light to be incident to a wafer on which a first layer and a second layer are sequentially stacked;
• a control unit configured to control the light source and the optical system;
• and
• a measurement unit configured to measure overlay errors of the first layer and the second layer,
• wherein the first layer includes a plurality of first patterns formed in each of a plurality of first shot areas, and the control unit allows extreme ultraviolet light to be incident to each of a plurality of second shot areas of the second layer and forms a plurality of second patterns, and
• wherein the measurement unit matches a pair of second shot areas among the plurality of second shot areas to each of the plurality of first shot areas, and generates a first correction parameter for correcting an overlay error of the pair of second shot areas based on the plurality of first shot areas, and a second correction parameter for correcting an overlay error between the pair of second shot areas.