Tool mismatch reduction using aberration map of the tools
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShih-Chuan Huang, Sheng-Min Wang, Shih-Ming Chang, Ken-Hsien Hsieh
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Abstract
In a method of tool matching, aberration maps of two or more optical systems of two or more scanner tools are determined. A photoresist pattern is generated by projecting a first layout pattern by an optical system of each one of the two or more scanner tools on a respective substrate. One or more Zernike coefficients of the two or more optical systems are adjusted based on the determined aberration maps of the two or more optical systems to minimize critical dimension (CD) variations in a first region of the photoresist patterns on each respective substrate.
Claims20
A system, comprising:
- two or more scanner tools, wherein each scanner tool comprises an optical system,
- wherein each optical system comprises:
- two or more mirrors;
- a controller;
- an image detector;
- an analyzer module;
- and
- an actuator coupled to the two or more mirrors;
- wherein in each optical system, the analyzer module is configured to receive an aberration map of a respective optical system from the image detector and to send the aberration map of the respective optical system to the controller, and
- wherein in each optical system, the controller is configured to receive aberration maps of other optical systems, and wherein the controller is also configured to adjust one or more Zernike coefficients of the respective optical system and to adjust one or more Zernike coefficients of the other optical systems, based on the aberration maps of the respective optical system and the other optical systems, to minimize critical dimension (CD) variations when the two or more scanner tools are used for photo lithography using an extreme ultraviolet (EUV) radiation beam to project a layout pattern onto a substrate.
A system, comprising:
- two or more scanner tools, wherein each scanner tool comprises an optical system,
- wherein each optical system comprises:
- a controller;
- an image detector;
- and
- an analyzer module;
- wherein in each optical system, the analyzer module is configured to receive an aberration map of a respective optical system from the image detector and to send the aberration map of the respective optical system to the controller, and
- wherein in each optical system, the controller is configured to receive aberration maps of other optical systems, and wherein the controller is also configured to adjust one or more Zernike coefficients of the respective optical system and to adjust one or more Zernike coefficients of the other optical systems, based on the aberration maps of the respective optical system and the other optical systems, to minimize critical dimension (CD) variations when the two or more scanner tools are used for photo lithography using an extreme ultraviolet (EUV) radiation beam to project a layout pattern onto a substrate.
A system, comprising:
- two or more scanner tools, wherein each scanner tool comprises an optical system,
- wherein each optical system comprises:
- two or more mirrors;
- a controller;
- an image detector;
- and
- an actuator coupled to the two or more mirrors;
- and
- wherein in each optical system, the controller is configured to receive aberration maps of a respective optical system and other optical systems, and wherein the controller is also configured to adjust one or more Zernike coefficients of the respective optical system and to adjust one or more Zernike coefficients of the other optical systems, based on the aberration maps of the respective optical system and the other optical systems, to minimize critical dimension (CD) variations.
Dependencies are inferred from the claim text.