Alkaline developer soluable silicon-containing resist underlayer film-forming composition

A method for producing a semiconductor device, the method comprising:

• a step (I) of applying a composition for forming a resist underlayer film for lithography onto a semiconductor substrate, the composition comprising:
• a component (a), which is a silane compound, and
• an element (b), which is an element of causing dissolution in an alkaline developer, wherein the element (b) is contained in the structure of the silane compound of the component (a),
• wherein the silane compound of component (a) comprises
• a hydrolyzable silane of the following Formula (1), a hydrolysate of the hydrolyzable silane, a hydrolytic condensate of the hydrolyzable silane, or any combination of these:
• wherein
• R1 is an organic group containing a phenolic hydroxyl group, or an organic group of the following Formulas (1-1), (1-2), (1-3), (1-4), or (1-5):
• in Formulas (1-1), (1-2), (1-3), (1-4), and (1-5),
• T1 is an alkylene group, a cyclic alkylene group, an alkenylene group, a sulfur atom, an oxygen atom, an oxycarbonyl group, an amide group, a secondary amino group, or any combination of these,
• T2 is an alkyl group or a hydrogen atom,
• T3 and T5 are each an aliphatic ring or an aromatic ring,
• T4 and T7 are each an alkylene group, a cyclic alkylene group, an alkenylene group, an arylene group, a sulfur atom, an oxygen atom, an oxycarbonyl group, an amide group, a secondary amino group, or any combination of these,
• T6 and T8 are each a lactone ring, and
• n is an integer of 2,
• and R1 is bonded to the silicon atom via an Si—C bond, and is the element (b) contained in the structure of the compound as the component (a);
• R2 is an alkyl group, an aryl group, a halogenated alkyl group, a halogenated aryl group, an alkenyl group, or an organic group having an epoxy group, an acryloyl group, a methacryloyl group, a mercapto group, an amino group, or a cyano group, and is bonded to the silicon atom via an Si—C bond;
• R3 is an alkoxy group, an acyloxy group, or a halogen atom;
• and
• a is an integer of 1, b is an integer of 0 or 1, and a+b is an integer of 1 or 2;
• and
• an additional hydrolyzable silage, wherein the additional hydrolyzable silane is at least one organosilicon compound selected from the group consisting of organosilicon compounds of the following Formula (2);
• wherein
• R4 is an organic group having an aromatic ring or an isocyanuric structure, and is bonded to the silicon atom via an Si—C bond;
• R5 is an alkoxy group, an acyloxy group, or a halogen atom;
• and
• e is an integer of 0 to 3;
• and
• wherein the hydrolyzable silane of the Formula (1) is contained in an amount of 30% by mole to 100% by mole relative to all the silanes;
• a step (II) of baking the composition for forming a resist underlayer film for lithography, to thereby form a resist underlayer film for lithography;
• a step (III) of applying a resist composition to the surface of the underlayer film, to thereby form a resist film;
• a step (IV) of exposing the resist film to light;
• a step (V) of developing the resist and removing the resist underlayer film for lithography in accordance with a resist pattern by using an alkaline developer, to thereby form a pattern transferred from the resist pattern;
• a step (VI) of processing the semiconductor substrate with the patterned resist and resist underlayer film for lithography;
• and
• a step (VII) of removing the resist underlayer film used for the semiconductor substrate in step (VI) with an alkaline aqueous solution after step (VI).