Process proximity effect correction method and process proximity effect correction device

A process proximity effect correction (PPC) method of a PPC correction device for performing PPC of a plurality of patterns using a processor, the method comprising:

• performing an etching process using a layout of the plurality of patterns;
• measuring data on an after cleaning inspection critical dimension (ACI-CD) of the etching process before correcting a layout critical dimension (CD);
• training a sensitivity model using the data;
• estimating an ACI-CD sensitivity prediction value using the sensitivity model;
• and
• determining a correction rate of the layout CD from the estimated ACI-CD sensitivity prediction value.

A process proximity effect correction (PPC) method of a PPC device for performing PPC of a plurality of patterns using a processor, the method comprises:

• inferring an after cleaning inspection critical dimension (ACI-CD) prediction value before correcting a layout critical dimension (CD) by applying a first layout CD and a first layout image to a machine learning model;
• inferring the ACI-CD prediction value at a time while correcting the layout CD by applying a second layout CD, different from the first layout CD, and the first layout image to the machine learning model;
• estimating an ACI-CD sensitivity prediction value using the ACI-CD prediction value at the time of correcting the layout CD and the ACI-CD prediction value before correcting the layout CD;
• and
• etching a pattern on a substrate based a layout corrected using the ACI-CD prediction value.