Light detector, light detection system, LIDAR device, and mobile body

A light detector, comprising:

• a plurality of elements arranged along a first direction and a second direction, the first direction and the second direction crossing each other, each of the plurality of elements including
• a first semiconductor region of a first conductivity type,
• a second semiconductor region located around the first semiconductor region in a first plane, the first plane being along the first and second directions, the second semiconductor region being of a second conductivity type, and
• a fourth semiconductor region of the second conductivity type surrounded with an upper portion of the second semiconductor region in the first plane, a second-conductivity-type impurity concentration in the fourth semiconductor region being less than a second-conductivity-type impurity concentration in the second semiconductor region;
• a plurality of insulating parts located respectively around the plurality of elements in the first plane;
• and
• an intermediate part located around the plurality of insulating parts in the first plane, the intermediate part including a semiconductor.

A light detector, comprising:

• a plurality of elements arranged along a first direction and a second direction, the first direction and the second direction crossing each other, each of the plurality of elements including
• a first semiconductor region of a first conductivity type, and
• a second semiconductor region located around the first semiconductor region in a first plane, the first plane being along the first and second directions, the second semiconductor region being of a second conductivity type;
• a plurality of insulating parts located respectively around the plurality of elements in the first plane;
• an intermediate part located around the plurality of insulating parts in the first plane, the intermediate part including a semiconductor;
• a quenching part electrically connected with at least one of a plurality of the first semiconductor regions or at least one of a plurality of the second semiconductor regions;
• a first electrode electrically connected with a plurality of the first semiconductor regions;
• a second electrode electrically connected with a plurality of the second semiconductor regions;
• a first interconnect electrically connected with at least two of the plurality of first semiconductor regions;
• and
• a second interconnect electrically connected with at least two of the plurality of second semiconductor regions,
• the plurality of first semiconductor regions being electrically connected with the first electrode via at least one of the first interconnects,
• the plurality of second semiconductor regions being electrically connected with the second electrode via at least one of the second interconnects.

A light detector, comprising:

• a plurality of elements arranged along a first direction and a second direction, the first direction and the second direction crossing each other, the plurality of elements being photodiodes and each including
• a first semiconductor region of a first conductivity type, the first conductivity type being p-type,
• a second semiconductor region located around the first semiconductor region in a first plane, the first plane being along the first and second directions, the second semiconductor region being of a second conductivity type, the second conductivity type being n-type, a reverse voltage being applied between the first semiconductor region and the second semiconductor region when the light detector is operated,
• a third semiconductor region surrounded with the first semiconductor region in the first plane, the third semiconductor region being of the first conductivity type, a first-conductivity-type impurity concentration in the third semiconductor region being less than a first-conductivity-type impurity concentration in the first semiconductor region,
• a p-type contact region provided on the third semiconductor region, the p-type contact region being configured to function as an anode electrode, a first-conductivity-type impurity concentration in the p-type contact region being greater than the first-conductivity-type impurity concentration in the third semiconductor region, and
• an n-type contact region provided on the second semiconductor region, the n-type contact region being configured to function as a cathode electrode, a second-conductivity-type impurity concentration in the n-type contact region being greater than a second-conductivity-type impurity concentration in the second semiconductor region;
• a plurality of insulating parts located respectively around a plurality of the second semiconductor regions in the first plane;
• and
• an intermediate part located around the plurality of insulating parts in the first plane, the intermediate part including a semiconductor.

A light detector, comprising:

• a semiconductor layer of a first conductivity type, a plurality of elements located on the semiconductor layer and arranged along a first direction and a second direction, the first direction and the second direction crossing each other, each of the plurality of elements including
• a first semiconductor region of the first conductivity type,
• a second semiconductor region located around the first semiconductor region in a first plane, the first plane being along the first and second directions, the second semiconductor region being of a second conductivity type, and
• a third semiconductor region of the first conductivity type surrounded with the first semiconductor region in the first plane, a first-conductivity-type impurity concentration in the third semiconductor region being less than a first-conductivity-type impurity concentration in the first semiconductor region;
• a plurality of insulating parts located respectively around the plurality of elements in the first plane;
• an intermediate part located around the plurality of insulating parts in the first plane, the intermediate part including a semiconductor;
• a first semiconductor layer of the first conductivity type, the semiconductor layer being located on the first semiconductor layer;
• and
• an electrode located under the first semiconductor layer,
• a plurality of the first semiconductor regions of the semiconductor layer being electrically connected with the electrode via the first semiconductor layer,
• the electrode being configured to function as an anode electrode,
• the plurality of elements being photodiodes,
• the first conductivity type being p-type,
• the second conductivity type being n-type,
• each of the plurality of elements further including
• a third semiconductor region of the first conductivity type surrounded with the first semiconductor region in the first plane, a first-conductivity-type impurity concentration in the third semiconductor region being less than a first-conductivity-type impurity concentration in the first semiconductor region,
• a p-type contact region located on the third semiconductor region, the p-type contact region being configured to function as an anode electrode, a first-conductivity-type impurity concentration in the p-type contact region being greater than a first-conductivity-type impurity concentration in the third semiconductor region, and
• an n-type contact region located on the second semiconductor region, the n-type contact region being configured to function as a cathode electrode, a second-conductivity-type impurity concentration in the n-type contact region being greater than a second-conductivity-type impurity concentration in the second semiconductor region,
• the plurality of insulating parts located respectively around a plurality of the second semiconductor regions in the first plane, and
• a reverse voltage being applied between the first semiconductor region and the second semiconductor region when the light detector is operated.

A light detector, comprising:

• a semiconductor layer of a first conductivity type, a plurality of elements located on the semiconductor layer and arranged along a first direction and a second direction, the first direction and the second direction crossing each other, each of the plurality of elements including
• a first semiconductor region of the first conductivity type,
• a second semiconductor region located around the first semiconductor region in a first plane, the first plane being along the first and second directions, the second semiconductor region being of a second conductivity type, and
• a third semiconductor region of the first conductivity type surrounded with the first semiconductor region in the first plane, a first-conductivity-type impurity concentration in the third semiconductor region being less than a first-conductivity-type impurity concentration in the first semiconductor region;
• a plurality of insulating parts located respectively around the plurality of elements in the first plane;
• an intermediate part located around the plurality of insulating parts in the first plane, the intermediate part including a semiconductor,
• wherein
• the plurality of elements are photodiodes,
• the first conductivity type is p-type,
• the second conductivity type is n-type,
• each of the plurality of elements includes:
• a third semiconductor region of the first conductivity type surrounded with the first semiconductor region in the first plane, a first-conductivity-type impurity concentration in the third semiconductor region being less than a first-conductivity-type impurity concentration in the first semiconductor region;
• and
• a p-type contact region located on the third semiconductor region, the p-type contact region being configured to function as an anode electrode, a first-conductivity-type impurity concentration in the p-type contact region being greater than a first-conductivity-type impurity concentration in the third semiconductor region,
• the intermediate part includes a second intermediate region and a third intermediate region,
• a lower end of the second intermediate region is positioned lower than lower ends of the plurality of insulating parts,
• the third intermediate region is located on the second intermediate region and configured to function as a cathode electrode,
• a second-conductivity-type impurity concentration in the third intermediate region is greater than a second-conductivity-type impurity concentration in the second intermediate region,
• a reverse voltage is applied between the first semiconductor region and the second semiconductor region when the light detector is operated,
• the plurality of insulating parts is respectively located around a plurality of the first semiconductor regions in the first plane, and
• a portion of each of a plurality of the second semiconductor regions is positioned below a respective one of the plurality of insulating parts.

A light detector, comprising:

• a semiconductor layer of a first conductivity type, a plurality of elements located on the semiconductor layer and arranged along a first direction and a second direction, the first direction and the second direction crossing each other, each of the plurality of elements including
• a first semiconductor region of the first conductivity type,
• a second semiconductor region located around the first semiconductor region in a first plane, the first plane being along the first and second directions, the second semiconductor region being of a second conductivity type, and
• a third semiconductor region of the first conductivity type surrounded with the first semiconductor region in the first plane, a first-conductivity-type impurity concentration in the third semiconductor region being less than a first-conductivity-type impurity concentration in the first semiconductor region;
• a plurality of insulating parts located respectively around the plurality of elements in the first plane;
• an intermediate part located around the plurality of insulating parts in the first plane, the intermediate part including a semiconductor;
• a first semiconductor layer of the first conductivity type, the semiconductor layer being located on the first semiconductor layer;
• and
• an electrode located under the first semiconductor layer, a plurality of the first semiconductor regions of the semiconductor layer being electrically connected with the electrode via the first semiconductor layer,
• the plurality of elements being photodiodes,
• the first conductivity type being p-type,
• the second conductivity type being n-type,
• the electrode being configured to function as an anode electrode,
• each of the plurality of elements further including
• a third semiconductor region of the first conductivity type surrounded with the first semiconductor region in the first plane, a first-conductivity-type impurity concentration in the third semiconductor region being less than a first-conductivity-type impurity concentration in the first semiconductor region,
• a p-type semiconductor region, a first-conductivity-type impurity concentration in the third semiconductor region being less than a first-conductivity-type impurity concentration in the p-type semiconductor region,
• an n-type semiconductor region, the first semiconductor region being positioned between the second semiconductor region and the n-type semiconductor region in the first plane, the third semiconductor region being positioned between the first semiconductor region and the n-type semiconductor region in the first plane, the p-type semiconductor region being positioned between the third semiconductor region and the n-type semiconductor region in the first plane,
• a first n-type contact region located on the n-type semiconductor region, the n-type contact region being configured to function as a cathode electrode, a second-conductivity-type impurity concentration in the first n-type contact region being greater than a second-conductivity-type impurity concentration in the n-type semiconductor region, and
• a second n-type contact region located on the second semiconductor region, the n-type contact region being configured to function as a cathode electrode, a second-conductivity-type impurity concentration in the second n-type contact region being greater than a second-conductivity-type impurity concentration in the second semiconductor region,
• the plurality of insulating parts located respectively around a plurality of the second semiconductor regions in the first plane, and
• a reverse voltage being applied between the first semiconductor region and the second semiconductor region and between the p-type semiconductor region and the n-type semiconductor region when the light detector is operated.