Method for testing total dose effect of SiC MOSFET device

A method for testing a SiC MOSFET device based on a total ionizing dose effect, comprising:

• acquiring a first threshold voltage of a first SiC MOSFET device in a batch of SiC MOSFET devices through performing first annealing on the first SiC MOSFET device;
• calculating a shift criterion based on the first threshold voltage;
• irradiating a second SiC MOSFET device in the batch of SiC MOSFET devices until a total ionizing dose of the irradiating reaches a target dose;
• acquiring a second threshold voltage of the second SiC MOSFET device after the irradiating;
• determining whether the second threshold meets a criterion, wherein the criterion is based on the shift criterion;
• in response to the second threshold not meeting the criterion,
• performing second annealing on the second SiC MOSFET device,
• acquiring a third threshold voltage of the second SiC MOSFET device after the second annealing;
• determining whether the third threshold voltage meets the criterion;
• determining that the batch fails a test of the total ionizing dose effect, in response to the second threshold not meeting the criterion and the third threshold voltage not meeting the criterion, and
• in response to the second threshold meeting the criterion or the third threshold meeting the criterion,
• performing third annealing on the second SiC MOSFET device,
• acquiring a fourth threshold voltage of the second SiC MOSFET device after the third annealing,
• determining whether the fourth threshold voltage meets the criterion;
• determining that the batch fails the test of the total ionizing dose effect, in response to the fourth threshold not meeting the criterion, and
• determining that the batch passes the test of the total ionizing dose effect, in response to the fourth threshold meeting the criterion.