Non-destructive inspection method including inspecting multiple observation sites and method of manufacturing semiconductor memory device using the same

An inspection method comprising:

• inspecting first observation sites by detecting ultrasonic signals emitted from the first observation sites;
• inspecting second observation sites by detecting ultrasonic signals emitted from the second observation sites;
• inspecting a target structure by detecting an ultrasonic signal emitted from the target structure, the target structure comprising a structure of interest;
• and
• obtaining extracted data, which is data regarding the structure of interest of the target structure, based on calculations regarding the detected ultrasonic signals emitted from the first observation sites, the second observation sites, and the target structure,
• wherein the first observation sites are intermediate results of forming the target structure, respectively,
• wherein the inspecting of the first observation sites is performed prior to formation of the target structure, and
• wherein the second observation sites include structures that are different from the target structure.