Quantum dots/graphene heterostructures for high-performance uncooled infrared detection
AssigneeUniversity of Kansas
InventorsJudy Z. Wu, Maogang Gong, Bo Liu, Andrew Shultz
Life of this patent
Estimating the term…
Abstract
Provided are methods of fabricating photodetectors based on heterostructures comprising graphene and mercury chalcogenide, e.g., HgTe, quantum dots. Embodiments of the methods are able to provide photodetectors that can detect MWIR light, e.g., greater than 3 mm at room temperature with responsivities R* of at least 104 A/W and detectivities D* of at least 1011 Jones. Thus, the present photodetectors outperform existing MWIR photodetectors without the need for cooling. The photodetectors themselves are also encompassed.
Claims13
A method of fabricating a photodetector, the method comprising:
- (a) combining a mercury acetate precursor with a chalcogen precursor in a solution comprising stabilizing ligands under conditions to form mercury chalcogenide quantum dots;
- (b) depositing the mercury chalcogenide quantum dots on a surface of graphene;
- and
- (c) exchanging stabilizing ligands on surfaces of the mercury chalcogenide quantum dots with 3-mercaptopropionic acid.
Dependencies are inferred from the claim text.