Method for applying a doped diamond layer to a substrate by chemical vapour deposition
AssigneesCarboncompetence GmbH, Yg-1 Co., Ltd.
InventorsDetlef Steinmuller, Doris Steinmuller-Nethl, Maximilian Steinmuller
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Abstract
A device (1) and a process for applying a doped diamond layer to a substrate (2, 2a) by chemical vapour deposition. The device (1) has a deposition chamber for holding the substrate (2, 2a), a gas activation element (7) in the form of a hollow body with a flow channel (7b) for a process gas, in particular hydrogen, an outlet opening (16) leading from the flow channel (7b) into the deposition chamber (3), a heating device (8) for heating a wall (7a) of the gas activation element (7) surrounding the flow channel (7b) and a solid precursor, other than carbon, within the flow channel (7b).
Claims7
A process for applying a doped diamond layer to a substrate by chemical vapour deposition comprising the steps of:
- (a) providing the substrate and a gas activation element in the form of a hollow body with a flow channel in a deposition chamber,
- (b) providing a precursor other than carbon in the solid state inside the flow channel,
- (c) heating a wall of the gas activation element with a heating device, said wall surrounding the flow channel,
- (d) introducing a process gas into the flow channel of the gas activation element,
- (e) activation of the process gas by impact excitation and thermal excitation, and activation of the precursor by thermal excitation,
- (f) introducing the activated process gas and the activated precursor through an outlet opening of the gas activation element into the deposition chamber, and
- (g) deposition of a doped diamond layer on the substrate.
Dependencies are inferred from the claim text.