Multicathode PVD system for high aspect ratio barrier seed deposition

A physical vapor deposition (PVD) chamber, comprising:

• a pedestal disposed within a processing region of the PVD chamber, the pedestal having an upper surface that is configured to support a workpiece thereon;
• a lid assembly comprising a first target spacing adapter, and a second spacing adapter, wherein:
• the first target spacing adapter is configured to space a center of a first backing plate a first distance from a plane of the upper surface of the pedestal;
• the second target spacing adapter is configured to space a center of a second backing plate a second distance from a plane of the upper surface of the pedestal, the second distance different from the first distance;
• the first target spacing adapter is positioned above the pedestal, the first target spacing adapter comprising one or more first cooling channels and a first magnetic confinement assembly;
• the second target spacing adapter is positioned above the pedestal, the second target spacing adapter comprising one or more second cooling channels and a second magnetic confinement assembly;
• and
• a computer readable medium storing instructions that when executed by a processor of a system that includes the PVD chamber, cause the system to control a first field generated by the first magnetic confinement assembly according to a first sputtering profile and a second field generated by the second magnetic confinement assembly according to a second sputtering profile.

A method for performing physical vapor deposition (PVD), comprising:

• disposing a workpiece on an upper surface of a pedestal that is configured to support the workpiece thereon, the pedestal disposed within a processing region of a PVD chamber;
• sputtering material from a first target onto the workpiece in a first zone of the processing region and material from a second target onto the workpiece in a second zone of the processing region, wherein a first target spacing adapter provides a center of a first surface of the first target a first distance from a plane of the upper surface, and wherein a second target spacing adapter provides a center of a second surface of the second target a second distance from a plane of the upper surface, wherein:
• the second distance different from the first distance;
• the first target spacing adapter is positioned between the first target and the pedestal, the first target spacing adapter comprising a first one or more cooling channels and a first magnetic confinement assembly;
• and
• the second target spacing adapter is positioned between the second target and the pedestal, the second target spacing adapter comprising a second one or more cooling channels and a second magnetic confinement assembly;
• and
• controlling a first voltage bias for the first target during sputtering the material from the first target and a second voltage bias for the second target during sputtering the material from the second target.