Preparation method of quantum dot light emitting diode

A preparation method of quantum dot light emitting diode, comprising steps of:

• providing a prefabricated device, and forming zinc oxide nanomaterial on the prefabricated device, to prepare an electron transport layer;
• packaging the quantum dot light emitting diode to obtain a quantum dot electroluminescent device;
• placing the obtained quantum dot electroluminescent device on a hot plate to perform heat treatment on the quantum dot electroluminescent device, such that an amount of surface hydroxyl groups of the electron transport layer is 0.15-0.6;
• wherein the heat treatment temperature is 80° C.-180° C., and the heat treatment time is 1-60 min;
• wherein the quantum dot light-emitting layer is a red-light quantum dot light-emitting layer, and the amount of the surface hydroxyl groups of the electron transport layer is 0.45-0.6, or alternatively, the quantum dot light-emitting layer is a green-light quantum dot light-emitting layer, and the amount of the surface hydroxyl groups of the electron transport layer is 0.3-0.45, or alternatively, the quantum dot light-emitting layer is a blue-light quantum dot light-emitting layer, and the amount of the surface hydroxyl groups of the electron transport layer is 0.15-0.3.