Power semiconductor module
AssigneeInfineon Technologies AG
InventorMichael Ebli
Life of this patent
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Abstract
A power semiconductor module includes an electrically insulating carrier plate with a structured, electrically conducting metallization layer disposed on a surface thereof, and a connection pin having two ends and being adhered to the carrier plate, one end of the connection pin being electrically connected to the metallization layer. The module further includes a semiconductor device adhered to the carrier plate and electrically connected to the metallization layer, and a discrete circuit including a voltage-or-current-or-both controlling device, the voltage-or-current-or-both controlling device being operatively coupled with the semiconductor device and being integrated in the connection pin at one of or between the two ends of the connection pin.
Claims14
A power semiconductor module, comprising:
- an electrically insulating carrier plate with a structured, electrically conducting metallization layer disposed on a surface of the electrically insulating carrier plate;
- a connection pin having two ends and being adhered to the electrically insulating carrier plate, one end of the connection pin being electrically connected to the metallization layer;
- a semiconductor device adhered to the electrically insulating carrier plate and electrically connected to the metallization layer;
- and
- a discrete circuit comprising a voltage-or-current-or-both controlling device, the voltage-or-current-or-both controlling device being operatively coupled with the semiconductor device and integrated in the connection pin at one of or between the two ends of the connection pin.
Dependencies are inferred from the claim text.