Semiconductor device including joint portion between conductive connection structures and method of fabricating the same

A method of fabricating a semiconductor device, the method comprising:

• providing a first substrate structure including a first substrate body, and a first conductive connection structure and a first two-dimensional inorganic layer disposed adjacent to each other over the first substrate body, the first two-dimensional inorganic layer having negative charges;
• providing a second substrate structure including a second substrate body, and a second conductive connection structure and a second two-dimensional inorganic layer disposed adjacent to each other over the second substrate body, the second two-dimensional inorganic layer having negative charges;
• and
• joining the first and second substrate structures to each other such that the first conductive connection structure and the second conductive connection structure are connected to each other, and the first two-dimensional inorganic layer and the second two-dimensional inorganic layer are joined to each other,
• wherein joining the first and second substrate structure includes:
• applying an organic material having positive charges on one of the first two-dimensional inorganic layer of the first substrate structure and the second two-dimensional inorganic layer of the second substrate structure;
• aligning the first two-dimensional inorganic layer and the second two-dimensional inorganic layer with each other by using the organic material having positive charges and physically contacting the first and second substrate structures each other with the aligned first and second two-dimensional inorganic layers;
• and
• removing the organic material having positive charges and joining the first two-dimensional inorganic layer and the second two-dimensional inorganic layer to each other.