μ-LED, μ-LED device, display and method for the same

An optoelectronic device, comprising:

• a layer stack comprising an active region and at least one structured semiconductor layer;
• wherein the at least one structured semiconductor layer comprises a photonic structure, the photonic structure comprising recesses etched into the at least one structured semiconductor layer having a first periodicity in a first direction and a second periodicity, different than the first periodicity, in a second direction different than the first direction,
• wherein the first periodicity in the first direction generates a first optical bandgap in the first direction within the at least one structured semiconductor layer and the second periodicity in the second direction generates a second optical bandgap in the second direction within the at least one structured semiconductor layer,
• wherein the first optical bandgap is different from the second optical bandgap;
• and
• a converter material arranged in the recesses of the photonic structure and configured to emit, when excited by an incident excitation radiation, converted radiation,
• wherein the two optical bandgaps generated by the first and second periodicities cause the converted radiation to emit substantially perpendicular from a surface of the at least one structured semiconductor layer.