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US 12,713,958 B2Granted
Packaging systems and methods for semiconductor devices
AssigneeAvago Technologies International Sales Pte. Limited
InventorsSam Ziqun Zhao, Arun Ramakrishnan, Teong Swee Tan
Life of this patent
Estimating the term…
Abstract
The present invention is directed to semiconductor devices and manufacturing methods thereof. In a specific embodiment, the present invention provides a semiconductor device that includes a filling material that supports the sides of an integrated circuit, which is coupled to a surface of a semiconductor substrate and surround by a ring structure. A portion of the filling material is positioned between the integrated circuit and the semiconductor substrate. There are other embodiments as well.
Claims20
A semiconductor device comprising:
- a substrate comprising a first top surface and a first bottom surface, the first top surface comprising a first plurality of electrical contacts;
- a first plurality of electrical connections directly coupled to the first plurality of electrical contacts;
- a circuit comprising a second top surface and a second bottom surface, the second bottom surface comprising a second plurality of electrical contacts, the second plurality of electrical contacts being directly coupled to the first plurality of electrical connections, the circuit further comprising a first side surface and a second side surface;
- a ring structure coupled to the substrate and positioned around the circuit, the ring structure comprising a third top surface, a height difference between the second top surface and the third top surface being less than 100 μm;
- and
- a filling material comprising a first portion and a second portion, the first portion being directly coupled to the first plurality of electrical connections and the second bottom surface, the second portion being in direct contact with the first side surface, the filling material being positioned between the circuit and the ring structure, the filling material being thermally conductive and comprising a thermosetting epoxy resin, a top region of the second portion being characterized by a width of at least 15 μm and a distance of less than 50 μm from the second top surface of the circuit to provide structural support for the circuit.
3 more elements
A semiconductor device comprising:
- a substrate comprising a first top surface and a first bottom surface, the first top surface comprising a first plurality of electrical contacts, the first bottom surface comprising a second plurality of electrical contacts, the substrate further comprising a ring structure;
- a first plurality of electrical connections directly coupled to the first plurality of electrical contacts, the first plurality of electrical connections being positioned within the ring structure;
- a second plurality of electrical connections directly coupled to the second plurality of electrical contacts;
- a circuit comprising a second top surface and a second bottom surface, the second bottom surface comprising a second plurality of electrical contacts, the second plurality of electrical contacts being directly coupled to the first plurality of electrical connections, the circuit further comprising a first side surface and a second side surface;
- and
- a filling material comprising a first portion and a second portion, the first portion being directly coupled to the first plurality of electrical connections and the second bottom surface, the second portion being in direct contact with the first side surface and the ring structure, the filling material being thermally conductive and comprising a thermosetting epoxy resin, a top region of the second portion being characterized by a width of at least 15 μm and a distance of less than 50 μm from the second top surface of the circuit to provide structural support for the circuit.
3 more elements
A semiconductor device comprising:
- a substrate comprising a first top surface and a first bottom surface, the first top surface comprising a first plurality of electrical contacts, the first bottom surface comprising a second plurality of electrical contacts;
- a ring structure positioned on a first location of the first top surface;
- a first plurality of electrical connections directly coupled to the first plurality of electrical contacts, the first plurality of electrical connections being positioned within the ring structure;
- a circuit comprising a second top surface and a second bottom surface, the second bottom surface comprising a second plurality of electrical contacts, the second plurality of electrical contacts being directly coupled to the first plurality of electrical connections, the circuit further comprising a first side surface and a second side surface;
- and
- a filling material comprising a first portion and a second portion, the first portion being directly coupled to the first plurality of electrical connections and the second bottom surface, the second portion being in direct contact with the first side surface and the ring structure, the filling material being thermally conductive and comprising a thermosetting epoxy resin, a top region of the second portion being characterized by a width of at least 15 μm and a distance of less than 50 μm from the second top surface of the circuit to provide structural support for the circuit.
3 more elements
Dependencies are inferred from the claim text.