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US 12,713,951 B2Granted
Semiconductor device and method of making redistribution layers with intensive pulsed light irradiation
AssigneeSTATS ChipPAC Pte. Ltd.
InventorsYongMoo Shin, HeeSoo Lee, SuJeong Kwon
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Abstract
A semiconductor device has a substrate. An electrical component is disposed over the substrate. An encapsulant is deposited over the electrical component. A conductive layer is formed over the substrate opposite the electrical component after depositing the encapsulant. The conductive layer is deposited as a plurality of graphene-coated metal balls in a matrix. The conductive layer is sintered by intensive pulsed light (IPL) irradiation.
Claims14
A method of making a semiconductor device, comprising:
- providing a substrate;
- disposing an electrical component over the substrate;
- depositing an encapsulant over the electrical component;
- forming a conductive layer over the substrate opposite the electrical component after depositing the encapsulant, wherein the conductive layer is deposited as a plurality of graphene-coated metal balls in a matrix;
- sintering the conductive layer by intensive pulsed light (IPL) irradiation;
- forming an insulating layer over the conductive layer;
- and
- forming a second conductive layer over the insulating layer, wherein the second conductive layer is deposited as a second plurality of graphene-coated metal balls in a second matrix.
5 more elements
A method of making a semiconductor device, comprising:
- providing a substrate;
- disposing an electrical component over the substrate;
- depositing an encapsulant over the electrical component;
- forming a conductive layer over the substrate opposite the electrical component, wherein the conductive layer includes a plurality of graphene-coated metal balls;
- sintering the conductive layer by intensive pulsed light (IPL) irradiation;
- forming an insulating layer over the conductive layer;
- and
- forming a second conductive layer over the insulating layer, wherein the second conductive layer includes a plurality of graphene-coated metal balls.
5 more elements
A method of making a semiconductor device, comprising:
- providing a substrate;
- disposing an electrical component over the substrate;
- depositing an encapsulant over the electrical component;
- forming a conductive layer over the substrate opposite the electrical component, wherein the conductive layer includes a plurality of graphene-coated metal balls;
- forming an insulating layer over the conductive layer;
- and
- forming a second conductive layer over the insulating layer, wherein the second conductive layer includes a second plurality of graphene-coated metal balls.
4 more elements
Dependencies are inferred from the claim text.