Semiconductor device and method for manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHung-Wei Tsai, Chih-Wei Wu, Ying-Ching Shih
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Abstract
A semiconductor device and a method for manufacturing the same are provided. The semiconductor device includes a first semiconductor module, a reorientation layer, a second semiconductor module and a plurality of jointing materials. The first semiconductor module has at least one first conductive structure and at least one second conductive structure. The reorientation layer covers part of the second conductive structure to form an opening. The second semiconductor module has at least one third conductive structure and at least one fourth conductive structure. The jointing materials are disposed between the first conductive structure and the third conductive structure, and disposed in the opening.
Claims20
A method for manufacturing a semiconductor device, comprising:
- forming a first semiconductor module, including at least one first conductive structure and at least one second conductive structure;
- forming a reorientation layer, covering part of the second conductive structure to form an opening;
- and
- placing a second semiconductor module including at least one third conductive structure and at least one fourth conductive structure on the first semiconductor module, wherein the third conductive structure is substantially aligned with the first conductive structure, and the fourth conductive structure is offset from the second conductive structure;
- wherein a material of the reorientation layer is a dielectric material.
A method for manufacturing a semiconductor device, comprising:
- forming a first semiconductor module, including at least one first conductive structure and at least one second conductive structure, wherein in a top view of the semiconductor device, the second conductive structure is larger than the at least one first conductive structure;
- forming a reorientation layer, covering part of the second conductive structure to form an opening;
- and
- placing a second semiconductor module including at least one third conductive structure and at least one fourth conductive structure on the first semiconductor module, wherein the third conductive structure is substantially aligned with the first conductive structure, and the fourth conductive structure is offset from the second conductive structure;
- wherein in a top view of the semiconductor device, a center of the opening and a center of the second conductive structure are located at different locations.
A method for manufacturing a semiconductor device, comprising:
- forming a first semiconductor module, including at least one first conductive structure and at least one second conductive structure, wherein in a top view of the semiconductor device, sizes of the second conductive structure and the at least one first conductive structure are different;
- forming a reorientation layer, covering part of the second conductive structure to form an opening;
- and
- placing a second semiconductor module including at least one third conductive structure and at least one fourth conductive structure on the first semiconductor module, wherein the third conductive structure is substantially aligned with the first conductive structure, and the fourth conductive structure is offset from the second conductive structure;
- wherein the first conductive structure is a bump disposed on a first chip, the second conductive structure is a through mold via (TMV), the second conductive structure and the first chip are formed individually, and the third conductive structure and the fourth conductive structure are bumps disposed on a second chip.
Dependencies are inferred from the claim text.