Pre-molded lead frames for semiconductor packages

A semiconductor package comprising:

• a pre-molded lead frame comprising a mold body comprising a first main surface and a second main surface opposite to the first main surface, at least two recesses separated from each other within the mold body and extending from the first main surface into the mold body, a plurality of first leads coupled to the mold body, and a die pad connected to at least one of the plurality of first leads;
• a first semiconductor die attached to the die pad within a first recess of the at least two recesses;
• a second semiconductor die attached to the mold body within a second recess of the at least two recesses;
• and
• a plurality of first electrical connections, each first electrical connection of the plurality of first electrical connections electrically coupling a respective first lead of the plurality of first leads to at least one of the first semiconductor die and the second semiconductor die.

A semiconductor package comprising:

• a pre-molded lead frame comprising a mold body comprising a first main surface and a second main surface opposite to the first main surface, at least two recesses within the mold body extending from the first main surface into the mold body, a plurality of first leads coupled to the mold body, and a die pad comprising a first surface aligned with the second main surface of the mold body and a second surface opposite to the first surface, the second surface exposed within a first recess of the at least two recesses;
• a first semiconductor die attached to the die pad within the first recess of the at least two recesses;
• a second semiconductor die attached to the mold body within a second recess of the at least two recesses;
• and
• a plurality of first electrical connections, each first electrical connection of the plurality of first electrical connections electrically coupling a respective first lead of the plurality of first leads to at least one of the first semiconductor die and the second semiconductor die,
• wherein a depth of the first recess is greater than or equal to a thickness of the first semiconductor die and a depth of the second recess is greater than or equal to a thickness of the second semiconductor die.