Sintered metal flip chip joints
AssigneeTexas Instruments Incorporated
InventorsKurt Peter Wachtler, Seunghyun Chae, Benjamin Stassen Cook
Life of this patent
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Abstract
An integrated circuit die may be fabricating to have a plurality of contacts. A metal post may be formed on each of the plurality of contacts. A plurality of bumps may be formed on a plurality of contact regions of a leadframe or on the posts, in which the plurality of bumps are formed with a material that includes metal nanoparticles. The IC die may be attached to the leadframe by aligning the metal posts to the leadframe and sintering the metal nanoparticles in the plurality of bumps to form a sintered metal bond between each metal post and corresponding contact region of the leadframe.
Claims20
A method for fabricating an integrated circuit, the method comprising:
- forming metal interconnects on at least one of:
- first contact regions on a semiconductor die, or second contact regions of a metallic leadframe of the integrated circuit, in which the metal interconnects include metal nanoparticles, wherein the metal nanoparticles comprise copper nanoparticles and either graphene nanoparticles or graphite nanoparticles;
- coupling the metal interconnects between the first contact regions and the second contact regions;
- sintering the metal nanoparticles to form a sintered metal bond between the metal interconnects and at least one of the first or second contact regions.
A method comprising:
- forming metal interconnects on at least one of:
- first contact regions on a semiconductor die, or second contact regions of a metallic leadframe of an integrated circuit, in which the metal interconnects include copper oxide nanoparticles;
- coupling the metal interconnects between the first contact regions and the second contact regions;
- and
- forming a metal bond between the metal interconnects and at least one of the first or second contact regions, wherein the forming the metal bond comprises reducing the copper oxide nanoparticles to copper nanoparticles.
A method comprising:
- forming metal interconnects on at least one of:
- first contact regions on a semiconductor die, or second contact regions of a metallic leadframe of an integrated circuit, in which the metal interconnects include metal nanoparticles, wherein the metal nanoparticles comprise a sacrificial nanoparticles;
- coupling the metal interconnects between the first contact regions and the second contact regions;
- sintering the metal nanoparticles to bond between the metal interconnects and at least one of the first or second contact regions;
- and
- removing the sacrificial nanoparticles.
Dependencies are inferred from the claim text.